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公开(公告)号：US20090127227A1
公开(公告)日：2009-05-21
申请号：US12065373
申请日：2007-02-15
CPC分类号： H01J37/32743 , H01J37/3244
摘要： Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，通过该处理方法在处理期间降低了等离子体损伤。 在对基板（5）进行期望的等离子体处理时，向处理室（2）供给用于进出基板（5）的惰性气体，将处理室（2）中的压力波动调整为 处于规定范围内，并且产生在处理室（2）中供应的惰性气体的等离子体（20）。 通过将等离子体功率控制在规定范围内，使衬底（5）的传送区域中的等离子体（20）的密度降低，并且将衬底（5）从支撑台（4） ）。
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公开(公告)号：US08480912B2
公开(公告)日：2013-07-09
申请号：US12065373
申请日：2007-02-15
CPC分类号： H01J37/32743 , H01J37/3244
摘要： Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
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公开(公告)号：US07283346B2
公开(公告)日：2007-10-16
申请号：US10481425
申请日：2002-12-26
IPC分类号： H01T2/30
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.
摘要翻译： 静电卡盘的电极图案包括径向的直线部分和从直线部分分支出的多个同心的C形部分。 直线部分在直径方向上彼此相对设置，并且使得它们位于几乎直线的线上。 C形部分交替地与梳子的齿接合。
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公开(公告)号：US20070107843A1
公开(公告)日：2007-05-17
申请号：US10582983
申请日：2004-12-07
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32477 , C23C16/4401
摘要： In a film-forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7), a ceramic inner cylinder (20) is arranged so as to contact with the vacuum chamber (1) at only a small area of the cylinder for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1). In this film-forming apparatus, it is possible to suppress generation of particles and to reduce the workload of the cleaning process.
摘要翻译： 在通过将气体（13）通过气体喷嘴（14）供给到真空室（1）中并将气体（13）变换为气体（13）而在基板（6）上形成薄膜（15）的成膜设备中， 等离子体通过向高频天线（7）施加电流，陶瓷内筒（20）布置成仅在气缸的小区域与真空室（1）接触，以防止膜 - 形成组件到真空室（1）的内壁上。 在该成膜装置中，可以抑制颗粒的产生并减少清洗过程的工作量。
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公开(公告)号：US20060027168A1
公开(公告)日：2006-02-09
申请号：US11240358
申请日：2005-10-03
申请人： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
发明人： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
IPC分类号： C23C16/00
摘要： A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
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公开(公告)号：US08960124B2
公开(公告)日：2015-02-24
申请号：US13322192
申请日：2010-05-24
申请人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
发明人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
CPC分类号： H01J37/32577 , C23C16/4404 , C23C16/50 , H01J37/32467 , H01J37/32504 , Y10S156/916
摘要： Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。
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公开(公告)号：US20120135164A1
公开(公告)日：2012-05-31
申请号：US13376067
申请日：2010-05-24
申请人： Ryuichi Matsuda , Kazuto Yoshida
发明人： Ryuichi Matsuda , Kazuto Yoshida
IPC分类号： C23C16/458 , C23C16/50
CPC分类号： H01L21/68785 , C23C16/4412 , H01L21/68792
摘要： Provided are a plasma processing apparatus and a plasma processing method, wherein a substrate supporting table is supported such that nonuniformity of heat release is eliminated and maintenance is facilitated. In the plasma CVD apparatus (10), a supporting beam (12), which has inside thereof a through hole (12c) penetrating the facing side walls (11a) of a vacuum chamber (11) and traverses the vacuum chamber (11) by passing through the center of the vacuum chamber, is integrally formed with the vacuum chamber (11). In the center portion of the upper surface of the supporting beam (12), an upper surface opening (12a) for attaching a substrate supporting table (13) is provided, and a substrate supporting table (13) having a cylindrical shape is attached to the upper surface opening (12a) by having therebetween a first seal member that seals together the vacuum side and the atmosphere side.
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中支撑基板支撑台以消除不均匀的热释放并且便于维护。 在等离子体CVD装置（10）中，支撑梁（12）的内部具有穿过真空室（11）的相对侧壁（11a）的通孔（12c），并通过真空室（11）横穿真空室 通过真空室的中心与真空室（11）整体形成。 在支撑梁（12）的上表面的中心部分设置有用于安装基板支撑台（13）的上表面开口（12a），并且将具有圆柱形状的基板支撑台（13）安装到 上表面开口（12a）之间具有将真空侧和大气侧密封在一起的第一密封构件。
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公开(公告)号：US07520246B2
公开(公告)日：2009-04-21
申请号：US11240358
申请日：2005-10-03
申请人： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
发明人： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
摘要： A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
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9.发明申请公开(公告)号：US20120132619A1
公开(公告)日：2012-05-31
申请号：US13376061
申请日：2010-05-24
申请人： Ryuichi Matsuda , Kazuto Yoshida
发明人： Ryuichi Matsuda , Kazuto Yoshida
IPC分类号： C23C16/455 , B05C11/00 , B44C1/22 , C23C16/50
CPC分类号： C23C16/4412
摘要： A gas discharge structure, and a device and a method for plasma processing which are capable of a uniform gas discharge and have improved maintainability. A pendulum gate valve (15) is eccentrically mounted to a vacuum chamber (11) in such a manner that the center (Mc) of the area of an opening region (M) corresponding to the center value of the recommended value for the use of the opening ratio of the pendulum gate valve (15) coincides with the axis center (Cc) of the vacuum chamber (11).
摘要翻译： 一种气体放电结构，以及能够均匀排气并具有改进的可维护性的等离子体处理的装置和方法。 摆闸阀（15）偏心地安装在真空室（11）上，使得开口区域（M）的区域的中心（Mc）对应于推荐值的中心值，以便使用 摆闸阀（15）的开度比与真空室（11）的轴心（Cc）重合。
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公开(公告)号：US20120125891A1
公开(公告)日：2012-05-24
申请号：US13322192
申请日：2010-05-24
申请人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
发明人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
IPC分类号： B44C1/22 , H05H1/24 , B05C5/02 , C23C16/455 , B05C5/00
CPC分类号： H01J37/32577 , C23C16/4404 , C23C16/50 , H01J37/32467 , H01J37/32504 , Y10S156/916
摘要： Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。
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