公开(公告)号：US5455138A

公开(公告)日：1995-10-03

申请号：US138962

申请日：1993-10-21

申请人： Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Koji Hitsuishi ,  Satoshi Kojima ,  Hirokazu Ohtoshi ,  Masaaki Yamamura

发明人： Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Koji Hitsuishi ,  Satoshi Kojima ,  Hirokazu Ohtoshi ,  Masaaki Yamamura

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/505 ,  C23C16/509 ,  G03G5/08 ,  G03G5/082

CPC分类号： C23C16/4405 ,  C23C16/505 ,  C23C16/509 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08235 ,  G03G5/08278

摘要： A process for producing a light-receiving member comprising a substrate and provided thereon a blocking layer and a photoconductive layer each comprised of a non-monocrystalline material is disclosed in which the blocking layer is comprised of a non-monocrystalline material comprising silicon atoms as matrix and at least one kind of atoms selected from the group consisting of carbon atoms, oxygen atoms and nitrogen atoms, the process comprising forming the blocking layer and the photoconductive layer by plasma CVD using glow discharge decomposition of a starting material gas caused by applying to the starting material gas an electromagnetic wave with a frequency of from 20 MHz to 450 MHz.

摘要翻译： 公开了一种制造光接收部件的方法，该光接收部件包括基板并且在其上设置有由非单晶材料构成的阻挡层和光电导层，其中阻挡层由包含硅原子作为基质的非单晶材料构成 和选自碳原子，氧原子和氮原子的至少一种原子，所述方法包括通过等离子体CVD形成阻挡层和光导电层，其中使用由施加到 起始原料气体具有频率为20MHz至450MHz的电磁波。

公开(公告)号：US5817181A

公开(公告)日：1998-10-06

申请号：US506347

申请日：1995-07-24

申请人： Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Koji Hitsuishi ,  Satoshi Kojima ,  Hirokazu Ohtoshi ,  Masaaki Yamamura

发明人： Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Koji Hitsuishi ,  Satoshi Kojima ,  Hirokazu Ohtoshi ,  Masaaki Yamamura

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/505 ,  C23C16/509 ,  G03G5/08 ,  G03G5/082 ,  B08B7/00

CPC分类号： C23C16/4405 ,  C23C16/505 ,  C23C16/509 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08235 ,  G03G5/08278

摘要： A process for producing a light-receiving member comprising a substrate and provided thereon a blocking layer and a photoconductive layer each comprised of a non-monocrystalline material is disclosed in which the blocking layer is comprised of a non-monocrystalline material comprising silicon atoms as matrix and at least one kind of atoms selected from the group consisting of carbon atoms, oxygen atoms and nitrogen atoms, the process comprising forming the blocking layer and the photoconductive layer by plasma CVD using glow discharge decomposition of a starting material gas caused by applying to the starting material gas an electromagnetic wave with a frequency of from 20 MHz to 450 MHz.

摘要翻译： 公开了一种制造光接收部件的方法，该光接收部件包括基板并且在其上设置有由非单晶材料构成的阻挡层和光电导层，其中阻挡层由包含硅原子作为基质的非单晶材料构成 和选自碳原子，氧原子和氮原子的至少一种原子，所述方法包括通过等离子体CVD形成阻挡层和光导电层，其中使用由施加到 起始原料气体具有频率为20MHz至450MHz的电磁波。

公开(公告)号：US5407768A

公开(公告)日：1995-04-18

申请号：US051358

申请日：1993-04-23

申请人： Kazuyoshi Akiyama ,  Masaaki Yamamura ,  Ryuji Okamura ,  Koji Hitsuishi

发明人： Kazuyoshi Akiyama ,  Masaaki Yamamura ,  Ryuji Okamura ,  Koji Hitsuishi

IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08221 ,  G03G5/08235 ,  G03G5/08285

摘要： An electrophotographic light-receiving member comprising a conductive substrate 101 and laminated thereto a non-monocrystalline material photoconductive layer 102 and a surface layer 103. The photoconductive layer 102 is mainly composed of silicon atoms and contains at least carbon atoms and hydrogen atoms. The percentage of carbon atoms having a carbon-carbon bond in the photoconductive layer is controlled to be not more than 60% based on the whole carbon atoms contained therein, and, in an instance in which a blocking layer 104 is provided between the conductive substrate 101 and the photoconductive layer 102, the percentage of carbon atoms having a carbon-carbon bond in the blocking layer is also controlled. This makes it possible to prevent clusters of carbon atoms from being formed in the photoconductive layer or blocking layer. Making the carbon atoms have a uniform distribution in the silicon film enables improvement in electrophotographic performances such as charge performance, sensitivity, residual potential, ghost-free properties, etc.

摘要翻译： 一种电子照相光接收元件，包括导电基底101并且层压在非单晶材料光电导层102和表面层103上。光电导层102主要由硅原子组成并且至少含有碳原子和氢原子。 光电导层中具有碳 - 碳键的碳原子百分数被控制在不超过其含有的全部碳原子的60％以下，并且在导电性基材中设置有阻挡层104的情况下 101和光电导层102，也控制了在阻挡层中具有碳 - 碳键的碳原子的百分比。 这使得可以防止在光电导层或阻挡层中形成碳原子簇。 使碳原子在硅膜中具有均匀分布，可以改善电荷性能，如充电性能，灵敏度，残留电位，无重影性能等。

公开(公告)号：US06702898B2

公开(公告)日：2004-03-09

申请号：US10046318

申请日：2002-01-16

申请人： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： C23C1600

CPC分类号： H01J37/32623 ,  C23C16/509

摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

摘要翻译： 为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是 在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器 ，源气源，高频电源。 在每个基板保持器，源气体供应和电源的端部设置端盖部件。

公开(公告)号：US6165274A

公开(公告)日：2000-12-26

申请号：US184044

申请日：1998-11-02

申请人： Kazuyoshi Akiyama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Hitoshi Murayama

发明人： Kazuyoshi Akiyama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Hitoshi Murayama

IPC分类号： G03G5/08 ,  C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/32724

摘要： A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.

摘要翻译： 一种等离子体处理装置，用于使用由高频功率引入装置提供的高频功率等离子体处理布置在反应室中的基板，其中所述高频功率引入装置包括阴极电极和能够传输高频功率的导体部分 所述导体部分穿过所述反应室的壁，而所述导体部分通过绝缘材料与所述反应室的所述壁电隔离，所述绝缘材料的至少一部分包括多孔陶瓷 材料，其中通过所述多孔陶瓷材料引入流体以控制所述阴极电极和/或所述导体部分的温度。

公开(公告)号：US06300225B1

公开(公告)日：2001-10-09

申请号：US09270211

申请日：1999-03-15

申请人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： H01L2136

CPC分类号： H01J37/32733 ,  C23C16/509 ,  C23C16/54 ,  H01J2237/2001 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

摘要翻译： 将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中 高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。 适于实施所述等离子体处理方法的装置。

公开(公告)号：US06946167B2

公开(公告)日：2005-09-20

申请号：US10691514

申请日：2003-10-24

申请人： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Kazuto Hosoi ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  C23C16/00

CPC分类号： H01J37/32623 ,  C23C16/509

摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

摘要翻译： 为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是 在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器 ，源气源，高频电源。 在每个基板保持器，源气体供应和电源的端部设置端盖部件。

公开(公告)号：US6148763A

公开(公告)日：2000-11-21

申请号：US182002

申请日：1998-10-29

申请人： Kazuyoshi Akiyama ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Hitoshi Murayama

发明人： Kazuyoshi Akiyama ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Ryuji Okamura ,  Hitoshi Murayama

IPC分类号： G03G5/08 ,  C23C16/44 ,  C23C16/50 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： C23C16/4404

摘要： In a deposited film forming apparatus, at least part of the inner wall surfaces of a reactor or surfaces of structural component parts on which films are deposited is constituted of a porous ceramic material. This can prevent film come-off of deposited films on inner walls and structural component parts of the reactor as far as possible so that the spherical protuberances can be prevented from occurring and electrophotographic photosensitive members having a superior quality can be formed.

摘要翻译： 在沉积膜形成装置中，反应器的内壁表面的至少一部分或其上沉积膜的结构部件的表面由多孔陶瓷材料构成。 这可以防止薄膜在反应器的内壁和结构部件上尽可能地脱落，从而可以防止发生球形突起，并且可以形成具有优良品质的电子照相感光构件。

公开(公告)号：US06649020B1

公开(公告)日：2003-11-18

申请号：US09897961

申请日：2001-07-05

申请人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

发明人： Ryuji Okamura ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuhiko Takada ,  Kazuyoshi Akiyama ,  Hitoshi Murayama

IPC分类号： C23C1600

CPC分类号： H01J37/32733 ,  C23C16/509 ,  C23C16/54 ,  H01J2237/2001 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.

摘要翻译： 将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中 高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。 适于实施所述等离子体处理方法的装置。

公开(公告)号：US06350497B1

公开(公告)日：2002-02-26

申请号：US09616989

申请日：2000-07-14

申请人： Hitoshi Murayama ,  Toshiyasu Shirasuna ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Takashi Ohtsuka ,  Kazuto Hosoi

发明人： Hitoshi Murayama ,  Toshiyasu Shirasuna ,  Ryuji Okamura ,  Kazuyoshi Akiyama ,  Takashi Ohtsuka ,  Kazuto Hosoi

IPC分类号： H05H124

CPC分类号： H01J37/32082 ,  C23C16/4588 ,  C23C16/509 ,  H01J37/32532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.

摘要翻译： 为了在保持良好的膜特性的同时提高生产率和提高沉积膜的特性的均匀性和再现性，等离子体处理装置被构造成使得多个圆柱形基板被设置在可降压反应容器中并且提供源气体 通过从高频功率引入装置引入的高频功率分解到反应容器中以产生等离子体以允许在圆柱形基板上沉积膜形成，蚀刻或表面改性，其中多个圆柱形基板以等间隔放置 并且其中高频功率引入装置设置在用于圆柱形基板的放置圆周的外侧。