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    RF FEED STRUCTURE FOR PLASMA PROCESSING
    3.
    发明申请
    RF FEED STRUCTURE FOR PLASMA PROCESSING 审中-公开
    用于等离子体处理的射频馈送结构

    公开(公告)号：US20110094683A1

    公开(公告)日：2011-04-28

    申请号：US12821626

    申请日：2010-06-23

    申请人： ZHIGANG CHEN ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  MARTIN JEFF SALINAS ,  SAMER BANNA ,  VALENTIN N. TODOROW

    发明人： ZHIGANG CHEN ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  MARTIN JEFF SALINAS ,  SAMER BANNA ,  VALENTIN N. TODOROW

    IPC分类号： H05H1/24 ,  H01P5/12

    CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

    摘要： Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto.

    摘要翻译： 提供等离子体处理装置。 在一些实施例中，RF馈送结构包括用于将RF功率耦合到多个对称布置的堆叠的第一RF线圈元件的第一RF馈送; 第二RF馈送，其围绕第一RF馈电同轴设置并与其电绝缘，第二RF馈送将RF功率耦合到相对于第一RF线圈元件同轴设置的多个对称布置的堆叠的第二RF线圈元件。 在一些实施例中，等离子体处理装置包括第一RF线圈; 相对于所述第一RF线圈同轴设置的第二RF线圈; 耦合到所述第一RF线圈以向其提供RF功率的第一RF馈送; 以及第二RF馈电，其相对于所述第一RF馈电同轴设置并与其电绝缘，所述第二RF馈电耦合到所述第二RF线圈以向其提供RF功率。

    METHODS FOR CALIBRATING RF POWER APPLIED TO A PLURALITY OF RF COILS IN A PLASMA PROCESSING SYSTEM
    4.
    发明申请
    METHODS FOR CALIBRATING RF POWER APPLIED TO A PLURALITY OF RF COILS IN A PLASMA PROCESSING SYSTEM 有权
    用于校准应用于等离子体处理系统中的多个RF线圈的RF功率的方法

    公开(公告)号：US20120104950A1

    公开(公告)日：2012-05-03

    申请号：US13090916

    申请日：2011-04-20

    申请人： SAMER BANNA ,  VALENTIN N. TODOROW ,  TSE-CHIANG WANG ,  XING LIN

    发明人： SAMER BANNA ,  VALENTIN N. TODOROW ,  TSE-CHIANG WANG ,  XING LIN

    IPC分类号： H05B31/26

    CPC分类号： H01J37/32174 ,  H01J37/321 ,  H01J37/32926 ,  H01J37/3299

    摘要： Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.

    摘要翻译： 提供了用于校准施加到多个RF线圈的RF功率的方法。 在一些实施例中，一种校准施加到具有功率分配器的处理室的第一和第二RF线圈的RF功率的方法，以控制提供给第一RF线圈的第一幅度等于第二幅度的第一比率 提供给第二RF线圈的RF功率可以包括在功率分配器的设定值的范围内测量多个第一比值，将多个测量的第一比值与多个参考第一比较，并且调整实际值 所述功率分配器在给定设定点值处，使得给定设定点处的功率分配器的第一比例与相应的参考第一比率匹配到第一容限水平内。

    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF
    5.
    发明申请
    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 有权

    公开(公告)号：US20100227420A1

    公开(公告)日：2010-09-09

    申请号：US12717358

    申请日：2010-03-04

    申请人： SAMER BANNA ,  VALENTIN N. TODOROW

    发明人： SAMER BANNA ,  VALENTIN N. TODOROW

    IPC分类号： H01L21/465

    CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/67069

    摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

    FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR
    6.
    发明申请
    FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR 有权
    现场增强电感耦合等离子体（FE-ICP）反应器

    公开(公告)号：US20100025384A1

    公开(公告)日：2010-02-04

    申请号：US12182342

    申请日：2008-07-30

    申请人： VALENTIN N. TODOROW ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

    发明人： VALENTIN N. TODOROW ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

    IPC分类号： B23K9/02 ,  B23K9/00

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/321

    摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

    摘要翻译： 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中， 或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

    APPARATUS FOR FORMING A MAGNETIC FIELD AND METHODS OF USE THEREOF
    7.
    发明申请
    APPARATUS FOR FORMING A MAGNETIC FIELD AND METHODS OF USE THEREOF 有权
    用于形成磁场的装置及其使用方法

    公开(公告)号：US20120097870A1

    公开(公告)日：2012-04-26

    申请号：US13097800

    申请日：2011-04-29

    申请人： GARY LERAY ,  SHAHID RAUF ,  VALENTIN N. TODOROW

    发明人： GARY LERAY ,  SHAHID RAUF ,  VALENTIN N. TODOROW

    IPC分类号： G21K1/093 ,  H05H1/04 ,  C23F1/08

    CPC分类号： H01J37/321 ,  H01J37/32669

    摘要： Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.

    摘要翻译： 本文提供了形成磁场的装置及其使用方法。 在一些实施例中，具有基本相似的尺寸的多个线圈以围绕处理室的中心轴线为中心的对称图案围绕处理室布置，其中多个线圈被配置为产生具有多个磁场线的磁场 其基本上是平面的并且基本上平行。 在一些实施例中，多个线圈包括围绕处理室布置的八个线圈，其中八个线圈中的每一个与八个线圈的相应相邻线圈相距大约45度的角度偏移。

    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF
    8.
    发明申请
    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 有权
    具有射频相控制的电感耦合等离子体反应器及其使用方法

    公开(公告)号：US20100224321A1

    公开(公告)日：2010-09-09

    申请号：US12717916

    申请日：2010-03-04

    申请人： MICHAEL N. GRIMBERGEN ,  ALAN HIROSHI OUYE ,  VALENTIN N. TODOROW

    发明人： MICHAEL N. GRIMBERGEN ,  ALAN HIROSHI OUYE ,  VALENTIN N. TODOROW

    IPC分类号： C23F1/08 ,  H01L21/3065

    CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/67069

    摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

    摘要翻译： 本发明的实施例通常提供一种电感耦合等离子体（ICP）反应器，其具有能够控制ICP源（第一RF源）和衬底偏压（第二RF源）之间的RF相位差的衬底RF偏压， 用于半导体工业中使用的等离子体处理反应堆。 RF相位差的控制为精细的过程调整提供了一个强大的旋钮。 例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自DC偏置控制和 室匹配。

    METHOD AND APPARATUS FOR STABLE PLASMA PROCESSING
    9.
    发明申请
    METHOD AND APPARATUS FOR STABLE PLASMA PROCESSING 有权
    用于稳定等离子体处理的方法和装置

    公开(公告)号：US20130118687A1

    公开(公告)日：2013-05-16

    申请号：US13734532

    申请日：2013-01-04

    申请人： VALENTIN N. TODOROW ,  John P. Holland ,  Michael D. Willwerth

    发明人： VALENTIN N. TODOROW ,  John P. Holland ,  Michael D. Willwerth

    IPC分类号： C23F1/08

    CPC分类号： C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

    摘要： A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

    摘要翻译： 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。