公开(公告)号：US20160004111A1

公开(公告)日：2016-01-07

申请号：US14592596

申请日：2015-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Bo Ram LEE ,  Sang II KIM ,  Yong Seok KIM ,  Seung-Jin BAEK ,  Dong-Min LEE

IPC: G02F1/1333 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/13338 ,  G02F1/133345 ,  G02F1/133377 ,  G02F1/1368 ,  H01L27/1262 ,  H01L27/323 ,  H01L27/3241 ,  H01L27/3244

Abstract: A liquid crystal display including: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected to the thin film transistor; a lower insulating layer facing the pixel electrode; and a touch sensor disposed on the lower insulating layer, the touch sensor including a first transparent conductive layer and a second transparent conductive layer. A plurality of microcavities is formed between the pixel electrode and the lower insulating layer.The microcavities form a liquid crystal layer including a liquid crystal material, the lower insulating layer has a matrix shape including a horizontal portion and a vertical portion, and the second transparent conductive layer overlaps the vertical portion of the lower insulating layer.

Abstract translation: 一种液晶显示器，包括：基板; 设置在所述基板上的薄膜晶体管; 连接到薄膜晶体管的像素电极; 面向像素电极的下绝缘层; 以及设置在所述下绝缘层上的触摸传感器，所述触摸传感器包括第一透明导电层和第二透明导电层。 在像素电极和下绝缘层之间形成多个微腔。 微腔形成包括液晶材料的液晶层，下绝缘层具有包括水平部分和垂直部分的矩阵形状，并且第二透明导电层与下绝缘层的垂直部分重叠。

公开(公告)号：US20190123123A1

公开(公告)日：2019-04-25

申请号：US16041968

申请日：2018-07-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong Oh SEO ,  Byung Soo SO ,  Dong-Min LEE ,  Dong-Sung LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  G09G3/3266 ,  G09G3/3291

CPC classification number: H01L27/3276 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  H01L27/12 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5203 ,  H01L51/5237 ,  H01L51/56

Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.

公开(公告)号：US20240008319A1

公开(公告)日：2024-01-04

申请号：US18117023

申请日：2023-03-03

Applicant: Samsung Display Co., LTD.

Inventor： Jong Oh SEO ,  Dong-Min LEE

IPC: H10K59/124 ,  H10K77/10 ,  H10K59/12 ,  H10K71/80 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

CPC classification number: H10K59/124 ,  H10K77/111 ,  H10K59/1201 ,  H10K71/80 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696 ,  H01L29/66742

Abstract: A display device includes a substrate including an opening, a buffer layer disposed on the substrate, a semiconductor disposed on the buffer layer, a gate electrode overlapping at least a portion of the semiconductor in a plan view, a source electrode and a drain electrode electrically connected to the semiconductor, and a light-emitting device electrically connected to the drain electrode. The opening of the substrate overlaps another portion of the semiconductor in a plan view.

公开(公告)号：US20220216285A1

公开(公告)日：2022-07-07

申请号：US17608972

申请日：2020-03-30

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Oh SEO ,  Ji-Hwan KIM ,  Byung-Soo SO ,  Dong-Min LEE ,  Jong-Hoon CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

公开(公告)号：US20160099264A1

公开(公告)日：2016-04-07

申请号：US14664232

申请日：2015-03-20

Applicant: Samsung Display Co., LTD.

Inventor： Su-Kyoung YANG ,  Sang-Won SHIN ,  Hyun-Eok SHIN ,  Chan-Woo YANG ,  Dong-Min LEE

IPC: H01L27/12 ,  H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L29/45 ,  C23C14/58 ,  H01L21/67 ,  H01J37/34 ,  C23C14/02 ,  C23C14/16 ,  C23C14/08 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L27/1259 ,  C23C14/02 ,  C23C14/541 ,  C23C14/5806 ,  H01J37/34 ,  H01L21/28008 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66742

Abstract: In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

Abstract translation: 在制造薄膜晶体管基板的方法中，在基底基板的第一表面上形成第一金属层。 通过使第一金属层与第一冷却板接触并使基底基板的第二表面与第二冷却板接触来冷却基底基板。 基底基板的第一表面和第二表面面向相反的方向。 通过图案化第一金属层形成栅电极。 形成源电极和漏电极。 源极与漏电极间隔开。 源极和漏极部分地与栅电极重叠。 形成与漏电极电连接的像素电极。

公开(公告)号：US20210057218A1

公开(公告)日：2021-02-25

申请号：US16997454

申请日：2020-08-19

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Min LEE ,  Ji-Hwan KIM ,  Jongoh SEO ,  Byung Soo SO

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/67

Abstract: A laser annealing device includes a stage, a laser generator, and a reflective member. The stage supports a substrate with a thin film formed thereon to be processed, and may be moved in a first direction at a set or predetermined speed. The laser generator irradiates a first area of the thin film with a laser beam while the stage is moved. The reflective member reflects a part of the laser beam, which is reflected from the first area of the thin film, to a second area of the thin film. The first area and the second area are spaced apart from each other.

公开(公告)号：US20190103495A1

公开(公告)日：2019-04-04

申请号：US15948097

申请日：2018-04-09

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Oh SEO ,  Byung Soo SO ,  Dong-Min LEE ,  Dong-Sung LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1218 ,  H01L27/1281 ,  H01L29/6675

Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

公开(公告)号：US20180012914A1

公开(公告)日：2018-01-11

申请号：US15442407

申请日：2017-02-24

Applicant: Samsung Display Co., Ltd

Inventor： Jong-Oh SEO ,  Dong-Min LEE ,  Mee-Jae KANG ,  Sang-Ho JEON

IPC: H01L27/12 ,  G02B27/09

CPC classification number: H01L27/1285 ,  G02B27/0927 ,  G02B27/0955 ,  H01L27/1222

Abstract: A laser crystallization apparatus includes a laser generating module configured to generate a laser beam, an optical module configured to guide the laser beam, an annealing chamber comprising a stage on which a target substrate comprising an amorphous thin film formed therein is disposed, the stage being movable along an X-axis direction and a Y-axis direction, and a tilt refractive lens configured to transform the laser beam having a cross-sectional area of a rectangle shape into a tilted laser beam having a cross-sectional area of a non-rectangular parallelogram shape and to irradiate the tilted laser beam perpendicular to the stage.