公开(公告)号：US20140264350A1

公开(公告)日：2014-09-18

申请号：US14290788

申请日：2014-05-29

Applicant: Samsung Display Co., Ltd.

Inventor： Joo-Han KIM ,  Hwa-Dong Jung ,  Wan-Soon Lim ,  Jee-Hun Lim ,  Joo Seok Yeom ,  Tae-Kyung Yim ,  Jae-Hak Lee ,  Hyuk Soon Kwon ,  Hyoung Cheol Lee ,  Jeong-Ju Park ,  Se-Myung Kwon ,  So-Young Koo

IPC: H01L29/786

CPC classification number: H01L29/78663 ,  H01L27/1222 ,  H01L27/1285

Abstract: Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Abstract translation: 本发明的示例性实施例公开了一种制造薄膜晶体管阵列面板的方法，其具有缩短的总体处理时间并提供均匀的结晶。 本发明的示例性实施例还公开了一种薄膜晶体管的结晶方法，包括在基板上形成包括第一像素区域，第二像素区域和第三像素区域的半导体层。 结晶方法包括使用微透镜阵列结晶对应于薄膜晶体管的沟道区的半导体层的一部分。

公开(公告)号：US20150108489A1

公开(公告)日：2015-04-23

申请号：US14579542

申请日：2014-12-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joo-Han KIM ,  Ki-Yong SONG ,  Dong-Ju YANG ,  Hee-Joon KIM ,  Yeo-Geon YOON ,  Sung-Hen CHO ,  Chang-Hoon KIM ,  Jae-Hong KIM ,  Yu-Gwang JEONG ,  Ki-Yeup LEE ,  Sang-Gab KIM ,  Yun-Jong YEO ,  Shin-Il CHOI ,  Ji-Young PARK

IPC: H01L23/00 ,  H01L27/12

CPC classification number: H01L24/05 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L2224/04042 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/00

Abstract: A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.

Abstract translation: 公开了布线的接触部分及其制造方法。 根据实施例的布线的接触部分包括：基板; 设置在所述基板上的导电层; 设置在所述导电层上并具有接触孔的层间绝缘层; 设置在所述导电层上并填充所述接触孔的金属层; 以及透明电极，设置在所述层间绝缘层上并连接到所述金属层，其中所述层间绝缘层包括下绝缘层和设置在所述下绝缘层上的上绝缘层，所述下绝缘层在所述接触孔处被底切， 并且金属层填充在下绝缘层被切下的部分。