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公开(公告)号：US20150171114A1
公开(公告)日：2015-06-18
申请号：US14279204
申请日：2014-05-15
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1288 , H01L29/41733 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor and a display device having the thin film transistor capable of reducing the voltage between the source and drain electrodes of the thin film transistor are disclosed. One inventive aspect includes a gate electrode, a semiconductor pattern, a source electrode and a drain electrode. The source and drain electrodes are formed on the semiconductor pattern and spaced apart from each other. At least one of the source electrode and the drain electrode does not overlap the gate electrode.
摘要翻译： 公开了一种薄膜晶体管和具有能够降低薄膜晶体管的源极和漏极之间的电压的薄膜晶体管的显示装置。 本发明的一个方面包括栅电极，半导体图案，源电极和漏电极。 源极和漏极形成在半导体图案上并彼此间隔开。 源电极和漏电极中的至少一个不与栅电极重叠。
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公开(公告)号：US10388794B2
公开(公告)日：2019-08-20
申请号：US15018058
申请日：2016-02-08
发明人： Jong Chan Lee , Woong Hee Jeong , Dae Ho Kim , Young Ki Shin , Yoon Ho Khang , Myoung Geun Cha
IPC分类号： H01L27/12 , G09G3/3233 , H01L29/786
摘要： A display device according to an exemplary embodiment of the present invention includes: a substrate; a plurality of transistors formed on the substrate; and a light-emitting device connected to the plurality of transistors, wherein the transistor includes a gate electrode, the plurality of transistors include a first transistor and a second transistor of which lateral wall slope angles of the gate electrode are different from each other, and the first transistor further includes a doping control member formed on a lateral wall of the gate electrode.
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公开(公告)号：US20150069399A1
公开(公告)日：2015-03-12
申请号：US14249329
申请日：2014-04-09
发明人： Seung-Hwan Cho , Young Ki Shin , Dong Hwan Shim , Yoon Ho Khang , Hyun Jae Na
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.
摘要翻译： 薄膜晶体管包括：第一半导体层; 设置在所述第一半导体层上的第二半导体层; 以及通过用杂质掺杂第一半导体层和第二半导体层的两侧而形成的一对源区和漏区，源极区包括与第一半导体层在同一平面上的第一源极层和第二源极层 在与第二半导体层相同的平面上，漏区包括与第一半导体层相同的平面上的第一漏极层和与第二半导体层在同一平面上的第二漏极层，并且仅第一半导体 层，第二半导体层是晶体管沟道层。
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公开(公告)号：US09502574B2
公开(公告)日：2016-11-22
申请号：US14249329
申请日：2014-04-09
发明人： Seung-Hwan Cho , Young Ki Shin , Dong Hwan Shim , Yoon Ho Khang , Hyun Jae Na
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.
摘要翻译： 薄膜晶体管包括：第一半导体层; 设置在所述第一半导体层上的第二半导体层; 以及通过用杂质掺杂第一半导体层和第二半导体层的两侧而形成的一对源区和漏区，源极区包括与第一半导体层在同一平面上的第一源极层和第二源极层 在与第二半导体层相同的平面上，漏区包括与第一半导体层相同的平面上的第一漏极层和与第二半导体层在同一平面上的第二漏极层，并且仅第一半导体 层，第二半导体层是晶体管沟道层。
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5.发明申请THIN FILM TRANSISTOR USING A CARBON NANOTUBE AS A CHANNEL AND A DISPLAY DEVICE INCLUDING THE SAME 审中-公开使用碳纳米管作为通道的薄膜晶体管和包括其的显示器件公开(公告)号：US20140353592A1
公开(公告)日：2014-12-04
申请号：US14460395
申请日：2014-08-15
发明人： Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
CPC分类号： H01L27/283 , B82Y10/00 , H01L27/3274 , H01L51/0048 , H01L51/0558
摘要： A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
摘要翻译： 薄膜晶体管包括被配置为接收控制电压的栅电极，与栅电极绝缘的源电极，并且被配置为接收输入电压，与栅电极绝缘的漏电极，并且被配置为接收输出电压， 在源电极和漏电极之间的沟道区域中形成的至少两个碳纳米管图案，其中碳纳米管图案彼此分离，以及至少一个将两个碳纳米管图案彼此连接的浮动电极。
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公开(公告)号：US10192901B2
公开(公告)日：2019-01-29
申请号：US15247989
申请日：2016-08-26
发明人： Young Ki Shin , Dae Ho Kim , Jong Chan Lee , Woong Hee Jeong , Yoon Ho Khang
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32
摘要： An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.
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7.发明授权Thin film transistor having at least two carbon nanotube patterns formed in a channel and connected by at least one floating electrode and a display device including the same 有权薄膜晶体管具有至少两个形成在沟道中并由至少一个浮动电极连接的碳纳米管图案和包括该碳纳米管图案的显示装置公开(公告)号：US09153626B2
公开(公告)日：2015-10-06
申请号：US14460395
申请日：2014-08-15
发明人： Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
CPC分类号： H01L27/283 , B82Y10/00 , H01L27/3274 , H01L51/0048 , H01L51/0558
摘要： A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
摘要翻译： 薄膜晶体管包括被配置为接收控制电压的栅电极，与栅电极绝缘的源电极，并且被配置为接收输入电压，与栅电极绝缘的漏电极，并且被配置为接收输出电压， 在源电极和漏电极之间的沟道区域中形成的至少两个碳纳米管图案，其中碳纳米管图案彼此分离，以及至少一个将两个碳纳米管图案彼此连接的浮动电极。
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