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    Display device
    1.
    发明授权
    Display device 有权

    公开(公告)号：US12219858B2

    公开(公告)日：2025-02-04

    申请号：US18502931

    申请日：2023-11-06

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Sun Ho Kim ,  Sun Hee Lee ,  Gun Hee Kim ,  Dong Hwan Shim ,  Yoo Min Ko ,  Chea Eun Kim

    IPC: H10K59/131 ,  G01S17/04 ,  H10K50/86 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38 ,  H10K59/40 ,  H10K59/65 ,  H10K59/88 ,  G06V40/19 ,  H04N23/57

    Abstract: A display device includes: a display panel including a first region including a transmissive part configured to transmit light provided from the outside and a second region not including the transmissive part; and a sensor overlapping with the transmissive part, and configured to obtain electrical information based on information provided from the outside, wherein the display panel includes: a thin film transistor layer including a plurality of transistors; a pixel defining layer defining an emission region of a plurality of pixels; and a light blocking layer on the pixel defining layer, and defining the transmissive part, and wherein the pixel defining layer in the first region covers at least a portion of the thin film transistor layer such that light provided through the transmissive part is blocked.

    Display device and method of driving the same
    2.
    发明授权
    Display device and method of driving the same 有权
    显示装置及其驱动方法

    公开(公告)号：US09548034B2

    公开(公告)日：2017-01-17

    申请号：US14715490

    申请日：2015-05-18

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Ji Hun Lim ,  Hyun Jae Na ,  Dong Hwan Shim ,  Byung Du Ahn

    IPC: G09G3/36 ,  H01L31/0224

    CPC classification number: G09G3/3648 ,  G09G2330/021 ,  G09G2360/144 ,  H01L31/022466

    Abstract: A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.

    Abstract translation: 显示装置包括耦合到第一扫描线和第一数据线的第一像素。 第一像素包括开关晶体管，其包括连接到第一扫描线的控制端子和连接到第一数据线的输入端子，并由接通扫描信号导通;第一晶体管，包括连接到第一扫描线的第一控制端子 第一扫描线，连接到第一数据线的第一输入端和连接到第一控制端的第一输出端; 以及第二晶体管，包括连接到第一输出端子的第二控制端子，接收基极电压的第二输入端子和连接到第二控制端子的第二输出端子。 第一和第二晶体管响应于截止扫描信号分别将光转换成分别输出到第一和第二输出端的第一和第二电流。

    Thin film transistor and manufacturing method thereof
    3.
    发明授权
    Thin film transistor and manufacturing method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09502574B2

    公开(公告)日：2016-11-22

    申请号：US14249329

    申请日：2014-04-09

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Seung-Hwan Cho ,  Young Ki Shin ,  Dong Hwan Shim ,  Yoon Ho Khang ,  Hyun Jae Na

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

    Abstract: A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.

    Abstract translation: 薄膜晶体管包括：第一半导体层; 设置在所述第一半导体层上的第二半导体层; 以及通过用杂质掺杂第一半导体层和第二半导体层的两侧而形成的一对源区和漏区，源极区包括与第一半导体层在同一平面上的第一源极层和第二源极层 在与第二半导体层相同的平面上，漏区包括与第一半导体层相同的平面上的第一漏极层和与第二半导体层在同一平面上的第二漏极层，并且仅第一半导体 层，第二半导体层是晶体管沟道层。

    Thin film transistor display panel and method of manufacturing the same
    4.
    发明授权
    Thin film transistor display panel and method of manufacturing the same 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号：US09147741B2

    公开(公告)日：2015-09-29

    申请号：US13892574

    申请日：2013-05-13

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hyun Jae Na ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

    IPC: H01L21/84 ,  H01L21/20 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

    Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

    Abstract translation: 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及 形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。

    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管显示面板及其制造方法

    公开(公告)号：US20150357478A1

    公开(公告)日：2015-12-10

    申请号：US14830091

    申请日：2015-08-19

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： HYUN JAE NA ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

    IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49

    CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

    Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

    Abstract translation: 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及 形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。

    Organic light-emitting display device
    9.
    发明授权
    Organic light-emitting display device 有权

    公开(公告)号：US12207516B2

    公开(公告)日：2025-01-21

    申请号：US17162106

    申请日：2021-01-29

    Applicant: Samsung Display Co., LTD.

    Inventor： Sang Eok Jang ,  Seung Chan Lee ,  Sun Ho Kim ,  Dong Hwan Shim ,  Sun Hee Lee ,  Gun Hee Kim ,  Tae Hoon Yang

    IPC: H10K59/35 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K59/131 ,  H10K59/65

    Abstract: An organic light-emitting display device includes: a display panel having a first display area and a second display area, the first and second display areas having different light transmittances from each other in a unit area, wherein the display panel includes a plurality of organic light-emitting diodes disposed in the first display area and the second display area, wherein a first organic light-emitting diode disposed in the first display area and a second organic light-emitting diode disposed in the second display area each include at least one light emitter, and the number of the light emitter included in the second organic light-emitting diode is greater than the number of the light emitter included in the first organic light-emitting diode.

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