公开(公告)号：US20220165680A1

公开(公告)日：2022-05-26

申请号：US17501008

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG HO KIM ,  JI HWANG KIM ,  HWAN PIL PARK ,  JONG BO SHIM

IPC: H01L23/552 ,  H01L23/498 ,  H01L23/42 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor package includes a first substrate that includes a first insulating layer, a ground pattern in the first insulating layer, and a first conductive pattern; a first semiconductor chip placed on an upper surface of the first substrate; a ball array structure that is placed on the upper surface of the first substrate along a perimeter of the first semiconductor chip and is electrically connected to the ground pattern; and a shielding structure placed on the upper surface of the first semiconductor chip and in contact with the upper surface of the ball array structure. The ball array structure has a closed loop shape, and includes a solder ball portion and a connecting portion that connects adjacent solder ball portions. A maximum width of the solder ball portion is greater than a width of the connecting portion in a direction perpendicular to an extension direction of the connecting portion.

公开(公告)号：US20160293797A1

公开(公告)日：2016-10-06

申请号：US15181179

申请日：2016-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAM GOO CHA ,  DONG HO KIM ,  GEON WOOK YOO

IPC: H01L33/06 ,  H01L33/08 ,  H01L33/36 ,  H01L33/24 ,  H01L33/44 ,  H01L33/00 ,  H01L33/18

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.

Abstract translation: 纳米结构半导体发光器件包括基极层，绝缘层和多个发光纳米结构。 基极层包括第一导电型半导体。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 发光纳米结构分别设置在基层的露出区域上，并且包括多个具有第一导电型半导体的纳米孔，并且具有设置为相同晶面的侧面。 发光纳米结构包括依次设置在纳米孔表面上的有源层和第二导电类型半导体层。 纳米孔的上表面被提供为发光纳米结构的上表面的部分，并且发光纳米结构的上表面彼此基本上是平面的。

公开(公告)号：US20190150746A1

公开(公告)日：2019-05-23

申请号：US15945010

申请日：2018-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG HO KIM

IPC: A61B5/00 ,  A61B5/1455

CPC classification number: A61B5/0075 ,  A61B5/0082 ,  A61B5/01 ,  A61B5/14532 ,  A61B5/14546 ,  A61B5/1455 ,  A61B5/681 ,  A61B5/6824 ,  A61B5/6831 ,  A61B5/6843 ,  A61B5/6885 ,  A61B5/721 ,  A61B5/742 ,  A61B2560/0252 ,  A61B2562/0247 ,  A61B2562/0252 ,  A61B2562/0261 ,  A61B2562/0271 ,  A61B2562/04 ,  A61B2562/06

Abstract: Provided is a bio-information measuring apparatus. According to an aspect, the bio-information measuring apparatus includes: an optical module comprising a light source configured to emit light onto or toward an object, and a detector configured to detect light reflected or scattered from the object; a pressure sensor configured to measure pressure between the optical module and the object; and a processor configured to restore a spectrum based on the detected reflected or scattered light, and to correct the restored spectrum based on the measured pressure.