公开(公告)号：US11898073B2

公开(公告)日：2024-02-13

申请号：US17007283

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Joo Jang ,  Seok-Hwan Hong ,  Shin-Ae Jun ,  Hyo-Sook Jang

IPC: C09K11/02 ,  C09K11/88 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/06 ,  B82Y10/00 ,  H10K50/15 ,  H10K50/16 ,  H10K50/115 ,  H10K85/30 ,  C09K11/70 ,  H01L33/50 ,  B82Y20/00

CPC classification number: C09K11/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/703 ,  H01L29/0665 ,  H01L29/0673 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K85/381 ,  B82Y20/00 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

公开(公告)号：US10759992B2

公开(公告)日：2020-09-01

申请号：US15429816

申请日：2017-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Joo Jang ,  Seok-Hwan Hong ,  Shin-Ae Jun ,  Hyo-Sook Jang

IPC: C09K11/62 ,  C09K11/70 ,  C09K11/02 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L51/50 ,  B82Y10/00 ,  H01L51/00 ,  H01L33/50 ,  B82Y20/00

Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

公开(公告)号：US08919998B2

公开(公告)日：2014-12-30

申请号：US14255115

申请日：2014-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung-Jae Im ,  Seo-Young Choi ,  Eun-Joo Jang

IPC: H01L33/50 ,  G02F1/1335 ,  H01L33/58 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/28 ,  H01L33/30 ,  B82Y20/00

CPC classification number: H01L33/504 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  G02F1/133603 ,  G02F1/133609 ,  G02F2001/133614 ,  H01L33/28 ,  H01L33/30 ,  H01L33/502 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/16145 ,  H01L2224/48091 ,  Y02B20/181 ,  Y10S977/95 ,  H01L2924/00014

Abstract: A white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the blue LED light source into white light. The light conversion layer includes a green light emitting semiconductor nanocrystal and a red light emitting semiconductor nanocrystal. The white light emitting diode has a red, green and blue color (“RGB”) color locus which is within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of sRGB color coordinates, or within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of AdobeRGB color coordinates.

Abstract translation: 白色发光二极管包括蓝色发光二极管（“LED”）光源和将来自蓝色LED光源的入射光转换成白光的光转换层。 光转换层包括绿色发光半导体纳米晶体和红色发光半导体纳米晶体。 白色发光二极管具有红色，绿色和蓝色（“RGB”）色彩轨迹，它们位于每个的恒定色调轨迹内的色度误差范围（±4＆Dgr; E * ab±2＆Dgr; E * ab） sRGB颜色坐标，或在每个AdobeRGB色坐标的恒定色调轨迹内的色度误差范围（±4＆Dgr; E * ab±2＆Dgr; E * ab）中。

公开(公告)号：US08919997B2

公开(公告)日：2014-12-30

申请号：US14255096

申请日：2014-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung-Jae Im ,  Seo-Young Choi ,  Eun-Joo Jang

IPC: H01L33/50 ,  G02F1/1335 ,  H01L33/58 ,  H01L33/30 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/28 ,  B82Y20/00

CPC classification number: H01L33/504 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  G02F1/133603 ,  G02F1/133609 ,  G02F2001/133614 ,  H01L33/28 ,  H01L33/30 ,  H01L33/502 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/16145 ,  H01L2224/48091 ,  Y02B20/181 ,  Y10S977/95 ,  H01L2924/00014

Abstract: A white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the blue LED light source into white light. The light conversion layer includes a green light emitting semiconductor nanocrystal and a red light emitting semiconductor nanocrystal. The white light emitting diode has a red, green and blue color (“RGB”) color locus which is within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of sRGB color coordinates, or within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of AdobeRGB color coordinates.

公开(公告)号：US09202997B2

公开(公告)日：2015-12-01

申请号：US13661956

申请日：2012-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Sook Jang ,  Hyun-A Kang ,  Eun-Joo Jang ,  Shin Ae Jun ,  Tae Won Jeong ,  In Taek Han

IPC: B32B5/16 ,  B05D7/00 ,  H01L33/56 ,  C09C3/00 ,  C09C3/10 ,  H01L33/50

CPC classification number: H01L33/56 ,  C09C3/006 ,  C09C3/10 ,  H01L33/501 ,  H01L33/502 ,  H01L33/507 ,  H01L2224/48091 ,  Y10T428/2989 ,  Y10T428/2998 ,  H01L2924/00014

Abstract: A semiconductor nanocrystal-polymer micronized composite that includes: at least one semiconductor nanocrystal; and a polymer surrounding the at least one semiconductor nanocrystal, wherein the polymer includes at least one functional group reactive with the semiconductor nanocrystal, and wherein the semiconductor nanocrystal-polymer micronized composite has a particle diameter of less than or equal to about 70 micrometers (μm) with a standard deviation of less than or equal to about 20 micrometers (μm), and an aspect ratio of more than about 1.0 and less than or equal to about 10.

Abstract translation: 一种半导体纳米晶体 - 聚合物微粉化复合材料，其包括：至少一种半导体纳米晶体; 以及围绕所述至少一种半导体纳米晶体的聚合物，其中所述聚合物包括至少一种与所述半导体纳米晶体反应的官能团，并且其中所述半导体纳米晶体 - 聚合物微粉化复合材料的粒径小于或等于约70微米（μm ），其标准偏差小于或等于约20微米（μm），并且纵横比大于约1.0且小于或等于约10。