SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING FLOATING CONDUCTIVE PATTERN

    公开(公告)号:US20180198022A1

    公开(公告)日:2018-07-12

    申请号:US15725438

    申请日:2017-10-05

    CPC classification number: H01L33/08 H01L25/0753 H01L33/20 H01L33/382 H01L33/46

    Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.

Patent Agency Ranking