公开(公告)号：US20220344463A1

公开(公告)日：2022-10-27

申请号：US17719996

申请日：2022-04-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hakchul Jung ,  Myunggil Kang ,  Jungho Do ,  Sanghoon Baek

IPC分类号： H01L29/06 ,  H01L27/088 ,  H01L29/786 ,  H01L23/48

摘要： An integrated circuit may include a first cell and a second cell. The first cell includes a first transistor in which nanosheets included in a first nanosheet stack and a second nanosheet stack extend in a first direction to pass through a first gate electrode that extends in a second direction intersecting with the first direction. The second cell includes a second transistor in which one or more nanosheets included in a third nanosheet stack extends in the first direction to pass through a second gate electrode that extends in the second direction. A length of the first cell in the second direction may be greater than a length of the second cell in the second direction.

公开(公告)号：US20240203973A1

公开(公告)日：2024-06-20

申请号：US18591089

申请日：2024-02-29

申请人： Samsung Electronics Co., Ltd.

发明人： Hakchul Jung ,  Ingyum Kim ,  Giyoung Yang ,  Jaewoo Seo

IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L27/0207 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

摘要： An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.

公开(公告)号：US20220310586A1

公开(公告)日：2022-09-29

申请号：US17528242

申请日：2021-11-17

申请人： Samsung Electronics Co., Ltd.

发明人： Hakchul Jung ,  Ingyum Kim ,  Giyoung Yang ,  Jaewoo Seo

IPC分类号： H01L27/02

摘要： An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.

公开(公告)号：US11948932B2

公开(公告)日：2024-04-02

申请号：US17528242

申请日：2021-11-17

申请人： Samsung Electronics Co., Ltd.

发明人： Hakchul Jung ,  Ingyum Kim ,  Giyoung Yang ,  Jaewoo Seo

IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L27/0207 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

摘要： An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.

公开(公告)号：US20230268412A1

公开(公告)日：2023-08-24

申请号：US18049036

申请日：2022-10-24

申请人： Samsung Electronics Co., Ltd.

发明人： Hakchul Jung ,  Garoom Kim ,  Ingyum Kim ,  Jiyun Han

IPC分类号： H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L23/528 ,  H01L29/778

CPC分类号： H01L29/42392 ,  H01L29/7851 ,  H01L29/0673 ,  H01L29/78696 ,  H01L23/5283 ,  H01L29/778

摘要： A semiconductor device includes a substrate including a first device region and a second device region, a first active pattern on the first device region, a second active pattern, which has a width smaller than the first active pattern, on the second device region, a first channel pattern on the first active pattern, a first source/drain pattern connected to the first channel pattern, a second channel pattern on the second active pattern, a second source/drain pattern connected to the second channel pattern, and a gate electrode that extends from the first channel pattern to the second channel pattern in a first direction. The first channel pattern includes a plurality of semiconductor patterns, which are vertically stacked and spaced apart from each other. The second channel pattern protrudes vertically from the second active pattern.