公开(公告)号：US20250146130A1

公开(公告)日：2025-05-08

申请号：US18647721

申请日：2024-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho SHIN ,  Hanhim KANG ,  Seungjae KIM ,  Oh-Hyuk KWON ,  Jaeho PARK ,  Hongtaek LIM ,  Eun-Kyung HONG

IPC: C23C16/455

Abstract: Substrate processing apparatuses and methods are provided. A substrate processing apparatus includes placing a first substrate on a first stage in a process chamber, placing a second substrate on a second stage in the process chamber, performing a first deposition process on the first substrate, and performing a second deposition process on the second substrate. The performing the first deposition process includes supplying the first substrate with a first gas. The performing the second deposition process includes supplying the second substrate with a second gas. The supplying the first substrate with the first gas includes alternately and repeatedly performing steps of filling a first gas supply unit with the first gas for a first time length, and supplying the first substrate with the first gas for a second time length. The second time length is greater than the first time length.

公开(公告)号：US20170084471A1

公开(公告)日：2017-03-23

申请号：US15208787

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek LIM ,  Kangsoo KIM ,  Hojun KIM ,  Jeonghoon NAM ,  Sejun PARK

IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/452 ,  C23C16/45512 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32009

Abstract: A semiconductor device fabricating apparatus includes a gas mixer having an upper surface and a lower surface, each of the upper and lower surfaces has an elliptical plane, and a side surface connecting the upper and lower surfaces, a gas inlet pipe on an upper portion of the gas mixer, and a gas outlet pipe on a lower portion of the gas mixer.

公开(公告)号：US20160194756A1

公开(公告)日：2016-07-07

申请号：US14972598

申请日：2015-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek LIM ,  Jeonghoon NAM ,  Chul PARK ,  Youngchae SEO ,  Jaihyung WON ,  Seungmoo LEE ,  Donghoon HAN

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45512 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591

Abstract: A semiconductor processing apparatus includes a susceptor supporting a processing target, a gas box spaced apart from the susceptor, the gas box including a concave region facing an upper surface of the processing target, and an inclined surface at an outer side of the concave region, an inclination angle of the inclined surface of the gas box relative to an upper surface of the susceptor is more than 10° and less than 35°, and a shower head within the concave region of the gas box.

Abstract translation: 一种半导体处理装置，包括支撑处理对象的基座，与基座间隔开的气箱，包括面对加工对象的上表面的凹部的气体盒和凹部的外侧的倾斜面， 气箱的倾斜面相对于基座的上表面的倾斜角度大于10°且小于35°，以及在气箱的凹入区域内的喷头。