公开(公告)号：US09773672B2

公开(公告)日：2017-09-26

申请号：US15016309

申请日：2016-02-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Su-min Kim ,  Hyun-woo Kim ,  Hyo-jin Yun ,  Kyoung-seon Kim ,  Hai-sub Na ,  Su-min Park ,  So-ra Han

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/02

CPC分类号： H01L21/0276 ,  G03F7/091 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28273 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139

摘要： A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.