公开(公告)号：US20170090675A1

公开(公告)日：2017-03-30

申请号：US15375444

申请日：2016-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho LEE ,  Soon-jae HONG ,  Myong-woo LEE ,  Gi-hun YUN ,  Su-jin KIM

IPC: G06F3/041 ,  A61B8/00 ,  A61B8/08 ,  G01S7/56

CPC classification number: A61B8/48 ,  A61B8/0858 ,  A61B8/4427 ,  A61B8/462 ,  A61B8/463 ,  A61B8/465 ,  A61B8/467 ,  A61B8/468 ,  A61B8/469 ,  A61B8/483 ,  A61B8/485 ,  A61B8/486 ,  A61B8/488 ,  A61B8/5223 ,  A61B8/54 ,  G01S7/52073 ,  G01S7/52074 ,  G01S7/52084 ,  G06F3/04845 ,  G06F3/0488 ,  G06F2203/04806 ,  G06F2203/04807 ,  G06T7/62 ,  G06T2207/10132 ,  G06T2207/20104 ,  G06T2207/30004

Abstract: An ultrasound apparatus includes a touch screen configured to display, on an ultrasound image, a touch recognition region of an object used as a measurement mark; and a controller configured to move the object and the touch recognition region, in response to an input for touching and dragging the touch recognition region, to detect, from a portion of the ultrasound image which corresponds to the touch recognition region, a line formed by connecting points at which a brightness variation of a pixel is greater than a threshold value, and to move the object to a position of the detected line by using coordinates of the detected line.

公开(公告)号：US20140158989A1

公开(公告)日：2014-06-12

申请号：US14103079

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-eun BYUN ,  Seong-jun PARK ,  David SEO ,  Hyun-jae SONG ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/16 ,  H01L29/775

CPC classification number: H01L29/1606 ,  H01L29/1087 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/458 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78618

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm−3, and a depletion width of less than or equal to 3 nm.

Abstract translation: 根据示例性实施例，电子设备包括：半导体层; 直接接触所述半导体层的期望（和/或备选地预定）区域的石墨烯; 和石墨烯上的金属层。 半导体层的期望（和/或备选地）预定区域包括以下之一：恒定的掺杂密度，等于或小于1019cm-3的掺杂密度以及小于或等于3nm的耗尽宽度 。

公开(公告)号：US20140014905A1

公开(公告)日：2014-01-16

申请号：US13772693

申请日：2013-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Jae-ho LEE ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hyung-cheol SHIN ,  Jae-hong LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract translation: 根据示例性实施例，场效应晶体管包括在衬底上的石墨烯通道层。 石墨烯通道层限定狭缝。 源电极和漏极彼此间隔开并布置成向石墨烯通道层施加电压。 栅极绝缘层在石墨烯沟道层和栅电极之间。

公开(公告)号：US20170272778A9

公开(公告)日：2017-09-21

申请号：US14590141

申请日：2015-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Seung-soo JEONG ,  Sang-youn LEE ,  Seong-wan KIM ,  Jae-ho LEE ,  Chan-yul KIM ,  Ho-cheon WEY

IPC: H04N19/67 ,  H04N19/154 ,  H04N19/17 ,  H04N19/124

CPC classification number: H04N19/67 ,  H04N19/124 ,  H04N19/154 ,  H04N19/17

Abstract: An image encoding method and an image decoding method, and an image encoder and an image decoder, are provided. The image encoding method includes detecting a static region and a motion region of an image, calculating an encoding error in the image, calculating a film grain noise (FGN) error in the motion region, and encoding the image to reduce an encoding error in the image other than the FGN error.

公开(公告)号：US20150195575A1

公开(公告)日：2015-07-09

申请号：US14590141

申请日：2015-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Seung-soo JEONG ,  Sang-youn LEE ,  Seong-wan KIM ,  Jae-ho LEE ,  Chan-yul KIM ,  Ho-cheon WEY

IPC: H04N19/67 ,  H04N19/154 ,  H04N19/17 ,  H04N19/124

CPC classification number: H04N19/67 ,  H04N19/124 ,  H04N19/154 ,  H04N19/17

Abstract: An image encoding method and an image decoding method, and an image encoder and an image decoder, are provided. The image encoding method includes detecting a static region and a motion region of an image, calculating an encoding error in the image, calculating a film grain noise (FGN) error in the motion region, and encoding the image to reduce an encoding error in the image other than the FGN error.

Abstract translation: 提供图像编码方法和图像解码方法以及图像编码器和图像解码器。 图像编码方法包括检测图像的静态区域和运动区域，计算图像中的编码误差，计算运动区域中的胶片颗粒噪声（FGN）误差，并对图像进行编码以减少图像编码误差 图像除了FGN错误。

公开(公告)号：US20150194234A1

公开(公告)日：2015-07-09

申请号：US14337741

申请日：2014-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin SHIN ,  Seong-jun PARK ,  Jae-ho LEE ,  Seong-Jun JEONG

IPC: H01B1/08 ,  C23C16/455 ,  C23C16/06 ,  C23C14/24 ,  C23C14/08 ,  C23C14/14 ,  H01B1/02 ,  C23C16/44

CPC classification number: H01B1/08 ,  C23C14/025 ,  C23C14/08 ,  C23C16/0281 ,  C23C16/40 ,  Y10T428/265

Abstract: A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.

Abstract translation: 公开了一种薄膜结构，包括金属种子层，以及通过使用金属种子层在导电性基板上形成氧化物薄膜的方法。 薄膜结构包括透明导电基板，沉积在透明导电基板上的金属籽晶层和沉积在金属籽晶层上的金属氧化物层。

公开(公告)号：US20150164474A1

公开(公告)日：2015-06-18

申请号：US14631183

申请日：2015-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho LEE ,  Soon-jae HONG ,  Gi-hun YUN

IPC: A61B8/00

CPC classification number: A61B8/463 ,  A61B8/0858 ,  A61B8/4427 ,  A61B8/462 ,  A61B8/465 ,  A61B8/467 ,  A61B8/468 ,  A61B8/469 ,  A61B8/5223 ,  A61B8/54 ,  G01S7/52073 ,  G01S7/52074 ,  G01S7/52084 ,  G06F3/041 ,  G06F3/0488 ,  G06T7/62 ,  G06T2207/10132 ,  G06T2207/20104 ,  G06T2207/30004

Abstract: An ultrasound measurement method includes: providing a first object and a second object within an ultrasound image displayed on a touch screen; activating the first object and the second object, to be movable to perform a measurement on the ultrasound image; receiving a touch-and-drag input with respect to at least one of the first and second objects; and displacing a corresponding one of the first and second objects on the ultrasound image in correspondence with the received touch-and-drag input.

公开(公告)号：US20150049039A1

公开(公告)日：2015-02-19

申请号：US14521627

申请日：2014-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho LEE ,  Soon-jae HONG ,  Gi-hun YUN

IPC: G06F3/041

CPC classification number: A61B8/463 ,  A61B8/0858 ,  A61B8/4427 ,  A61B8/462 ,  A61B8/465 ,  A61B8/467 ,  A61B8/468 ,  A61B8/469 ,  A61B8/5223 ,  A61B8/54 ,  G01S7/52073 ,  G01S7/52074 ,  G01S7/52084 ,  G06F3/041 ,  G06F3/0488 ,  G06T7/62 ,  G06T2207/10132 ,  G06T2207/20104 ,  G06T2207/30004

Abstract: A method of providing a copy image of an ultrasound image includes: displaying the ultrasound image on a touch screen; receiving a proximate touch input with respect to the ultrasound image; extracting a partial image corresponding to the proximate touch input, from the ultrasound image; and displaying a copy image of the partial image, the copy image overlapping on the ultrasound image.

Abstract translation: 提供超声波图像的复印图像的方法包括：在触摸屏上显示超声图像; 接收相对于所述超声图像的接近触摸输入; 从所述超声图像中提取与所述邻近触摸输入对应的部分图像; 以及显示所述部分图像的复制图像，所述复制图像在所述超声图像上重叠。

公开(公告)号：US20150155287A1

公开(公告)日：2015-06-04

申请号：US14265965

申请日：2014-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Seong-jun PARK ,  Hyeon-jin SHIN ,  Jae-ho LEE

IPC: H01L27/115 ,  H01L29/43 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L29/1606 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/35 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/66015 ,  H01L29/7606 ,  H01L45/149

Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

Abstract translation: 公开了包括二维（2D）材料，其制造方法及其操作方法的存储器件。 存储器件可以包括晶体管，其包括与石墨烯接触的石墨烯和2D半导体以及连接到晶体管的电容器。 存储器件可以包括依次布置的第一电极，第一绝缘层，第二电极，半导体层，第三电极，第二绝缘层和第四电极。 第二电极可以包括石墨烯，并且半导体层可以包括2D半导体。 或者，存储器件可以包括第一和第二电极元件，在第一和第二电极元件之间的石墨烯层，在石墨烯层和第一电极元件之间的2D半导体层，以及在石墨烯层和第二电极之间的电介质层 。

公开(公告)号：US20150137074A1

公开(公告)日：2015-05-21

申请号：US14334028

申请日：2014-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Hyeon-jin SHIN ,  Min-Hyun LEE ,  In-kyeong YOO ,  Seong-jun PARK

IPC: H01L29/66 ,  H01L29/267 ,  H01L29/165 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/66977 ,  H01L21/76224 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78

Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Abstract translation: 公开了一种包括分离的接点的石墨烯器件及其制造方法。 石墨烯装置是其中使用石墨烯作为通道的场效应晶体管（FET）。 源电极和漏电极不直接接触石墨烯通道，并且由掺杂半导体形成的结接点分别设置在石墨烯通道和源电极之间以及石墨烯通道和漏电极之间。 因此，在由于石墨烯通道和接合点之间的阻挡而不向栅电极施加电压的关闭状态下，载体可能不移动。 结果，石墨烯器件在断开状态下可能具有低电流。