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公开(公告)号：US20200317511A1
公开(公告)日：2020-10-08
申请号：US16906214
申请日：2020-06-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeon-jin SHIN , Jae-young CHOI , Yun-sung WOO , Seon-mi YOON
Abstract: A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.
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2.发明申请GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE 审中-公开石墨层结构，其制备方法和透明电极和包括石墨层结构的晶体公开(公告)号：US20140141265A1
公开(公告)日：2014-05-22
申请号：US14165819
申请日：2014-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeon-jin SHIN , Jae-young CHOI , Joung-real AHN , Jung-tak SEO
IPC: B32B9/04
CPC classification number: B32B9/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02378 , H01L21/02488 , H01L21/02527 , H01L21/02656 , H01L29/1606 , H01L29/1608 , H01L29/778 , H01L31/022466 , H01L31/1884 , H01M4/96 , H01M8/0234 , H01M8/086 , H01M8/1007 , H01M8/1011 , H01M8/103 , H01M8/1041 , Y02E10/50 , Y02E60/523 , Y02P70/56
Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
Abstract translation: 一种直接生长石墨烯层状结构的石墨烯的方法，该方法包括在碳化硅（SiC）薄膜的表面上离子注入氮离子和氧离子的至少一个离子以形成离子注入层 SiC薄膜; 以及利用其中形成的离子注入层对SiC薄膜进行热处理以对存在于离子注入层上的SiC表面层进行石墨化。
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公开(公告)号：US20140014970A1
公开(公告)日：2014-01-16
申请号：US13937563
申请日：2013-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yun-sung WOO , Seon-mi YOON , Hyeon-jin SHIN , Dong-wook LEE , Jae-young CHOI
CPC classification number: H01L21/02527 , H01L21/02378 , H01L21/02612 , H01L21/02664 , H01L21/8213 , H01L29/1606 , H01L29/7781 , Y10S977/734
Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.
Abstract translation: 在碳化硅（SiC）晶片上制造单层石墨烯的方法包括在SiC晶片上形成多个石墨烯层，使得多个石墨烯层位于SiC晶片的缓冲层上，形成缓冲层 的碳; 从缓冲层去除多个石墨烯层; 并将缓冲层转化为单层石墨烯。
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4.发明申请THIN FILM STRUCTURE INCLUDING METAL SEED LAYER AND METHOD OF FORMING OXIDE THIN FILM ON TRANSPARENT CONDUCTIVE SUBSTRATE BY USING THE METAL SEED LAYER 有权包括金属层的薄膜结构和使用金属层的透明导电基板上形成氧化膜薄膜的方法公开(公告)号：US20150194234A1
公开(公告)日：2015-07-09
申请号：US14337741
申请日：2014-07-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon-jin SHIN , Seong-jun PARK , Jae-ho LEE , Seong-Jun JEONG
CPC classification number: H01B1/08 , C23C14/025 , C23C14/08 , C23C16/0281 , C23C16/40 , Y10T428/265
Abstract: A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.
Abstract translation: 公开了一种薄膜结构，包括金属种子层，以及通过使用金属种子层在导电性基板上形成氧化物薄膜的方法。 薄膜结构包括透明导电基板，沉积在透明导电基板上的金属籽晶层和沉积在金属籽晶层上的金属氧化物层。
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5.发明申请INVERTER INCLUDING TWO-DIMENSIONAL MATERIAL, METHOD OF MANUFACTURING THE SAME AND LOGIC DEVICE INCLUDING INVERTER 有权包括二维材料的逆变器，其制造方法和包括逆变器的逻辑器件公开(公告)号：US20150137075A1
公开(公告)日：2015-05-21
申请号：US14265769
申请日：2014-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-seong HEO , Seong-jun PARK , Hyeon-jin SHIN
IPC: H01L27/092 , H01L29/66 , H01L21/02 , H01L29/51 , H01L21/8238 , H01L29/78 , H01L29/24
CPC classification number: H01L27/0922 , H01L21/823807 , H01L29/1606 , H01L29/24 , H01L29/242 , H01L29/267 , H01L29/518 , H01L29/66045 , H01L29/66969 , H01L29/778 , H01L29/7827
Abstract: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.
Abstract translation: 包括二维（2D）材料的逆变器，其制造方法以及包括逆变器的逻辑器件。 反相器可以包括彼此连接的第一晶体管和第二晶体管，并且第一和第二晶体管层可以包括2D材料。 第一晶体管可以包括第一石墨烯层和与第一石墨烯层接触的第一2D半导体层，并且第二晶体管可以包括第二石墨烯层和与第二石墨烯层接触的第二2D半导体层。 第一2D半导体层可以是p型半导体，第二2D半导体层可以是n型半导体。 第一2D半导体层可以布置在第二2D半导体层的侧面。
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Patent Agency Ranking
6.发明申请SUBSTRATE ASSEMBLY, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME 有权基板组件，其形成方法和包括其的电子器件公开(公告)号：US20140287244A1
公开(公告)日：2014-09-25
申请号：US14063529
申请日：2013-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon-jin SHIN , Sang-Woo KIM , Jin yeong LEE
CPC classification number: B32B15/04 , B32B2457/00 , C23C16/342 , C23C28/34 , H01L21/02458 , Y10T428/31678
Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.
Abstract translation: 基板组件包括直接接合到基板的表面的第一六边形氮化硼片和在第一六边形氮化硼片上的金属层。
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公开(公告)号：US20140263166A1
公开(公告)日：2014-09-18
申请号：US14288913
申请日：2014-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon-jin SHIN , Won-mook CHOI , Jae-young CHOI , Seon-mi YOON
IPC: C01B31/04
CPC classification number: C01B31/0446 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/182 , C01B32/184 , C01B32/194 , C01B2204/22 , H01J1/304 , H01J2201/30461 , H01J2329/0449 , Y10T428/24802 , Y10T428/24851 , Y10T428/265 , Y10T428/30 , Y10T428/31678 , Y10T428/31786
Abstract: A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.
Abstract translation: 石墨烯基，包括：石墨烯; 以及基板，其中所述石墨烯直接形成在所述基板的至少一个表面上，并且所述基板的表面的至少约90％的面积不具有石墨烯皱纹。
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8.发明申请DOPED GRAPHENE STRUCTURE COMPRISING HYDROPHOBIC ORGANIC MATERIAL, METHOD FOR PREPARING THE SAME, AND TRANSPARENT ELECTRODE, DISPLAY DEVICE AND SOLAR CELL COMPRISING THE ELECTRODE 有权包含疏水性有机材料的包覆石脑油结构，其制备方法和透明电极，显示装置和包含电极的太阳能电池公开(公告)号：US20140110670A1
公开(公告)日：2014-04-24
申请号：US13847772
申请日：2013-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-mi YOON , Hyeon-jin SHIN , Jae-young CHOI , Won-mook CHOI , Soo-min KIM , Young-hee LEE
CPC classification number: H01L29/1606 , H01G9/20 , H01G9/2022 , H01G9/2077 , H01L21/04 , H01L21/0405 , H01L29/16 , H01L51/0045 , H01L51/442 , H01L51/5203 , Y02E10/50 , Y02E10/542 , Y02E10/549
Abstract: A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.
Abstract translation: 可以在掺杂有掺杂剂的石墨烯的表面上形成疏水性有机层，以改善掺杂石墨烯相对于水分和温度的稳定性。 因此，具有含有疏水性有机层的掺杂石墨烯的透明电极可以有用地应用于太阳能电池或显示装置。
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9.发明申请GRAPHENE LAMINATE AND METHOD OF PREPARING THE SAME 审中-公开GRAPHENE LAMINATE AND METHOD OF PREPARTING THE SAME公开(公告)号：US20140053973A1
公开(公告)日：2014-02-27
申请号：US14068676
申请日：2013-10-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeon-jin SHIN , Jae-young CHOI , Gang-hee HAN , Young-hee LEE
IPC: C01B31/04
CPC classification number: C01B31/0446 , B32B7/06 , B32B7/12 , B32B15/08 , B32B27/28 , B32B27/32 , B32B27/36 , B32B27/40 , B32B38/10 , C01B32/184 , C23C16/26 , C23C16/44 , G09F3/10 , H01L21/683 , Y10T428/24612 , Y10T428/26 , Y10T428/30 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31678 , Y10T428/31855 , Y10T428/31971
Abstract: A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.
Abstract translation: 包括基底，基底上的粘合剂层和粘合剂层上的石墨烯的石墨烯层压体，其中石墨烯通过粘合剂层结合到基底上。
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10.发明申请公开(公告)号：US20170282502A1
公开(公告)日：2017-10-05
申请号：US15628891
申请日：2017-06-21
Applicant: Samsung Electronics Co., Ltd. , Sungkyunkwan University Foundation for Corporate Collaboration
Inventor： Hyeon-jin SHIN , Sang-Woo KIM , Jin yeong LEE
CPC classification number: B32B15/04 , B32B2457/00 , C23C16/342 , C23C28/34 , H01L21/02458 , Y10T428/31678
Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.
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