公开(公告)号：US20220013397A1

公开(公告)日：2022-01-13

申请号：US17165594

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehyun LEE ,  YOUNGIL KANG ,  YOUNGEUN KIM ,  Jaesuk KIM ,  MINJI PARK ,  SANGWOOK PARK ,  Dongho Shin ,  DONGYUN YEO ,  CHUNGHUN LEE ,  KYOUNG-MI CHOI

IPC: H01L21/683 ,  H01J37/32

Abstract: Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.

公开(公告)号：US20230175113A1

公开(公告)日：2023-06-08

申请号：US17849914

申请日：2022-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesuk KIM ,  Sangwook PARK ,  Gukrok YUN ,  Kyuhee HAN

IPC: C23C14/35 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/351 ,  H01J37/3405 ,  H01J37/32651 ,  H01J37/345 ,  H01J37/3417 ,  H01J2237/332

Abstract: A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber toprotect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.

公开(公告)号：US20240212980A1

公开(公告)日：2024-06-27

申请号：US18217889

申请日：2023-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesuk KIM ,  Sangwook PARK ,  Gukrok YUN ,  Kyoungwhan OH

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/3211 ,  H01J37/3244 ,  H01J37/3444 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/3435

Abstract: Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.