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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权

    公开(公告)号：US10134949B2

    公开(公告)日：2018-11-20

    申请号：US15678462

    申请日：2017-08-16

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jai Won Jean ,  Min Ho Kim ,  Min Hwan Kim ,  Jang Mi Kim ,  Chul Min Kim ,  Jeong Wook Lee ,  Jae Deok Jeong ,  Yong Seok Choi

    IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

    摘要： A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

    Method for manufacturing semiconductor light emitting device allowing for recycling of semiconductor growth substrate
    2.
    发明授权
    Method for manufacturing semiconductor light emitting device allowing for recycling of semiconductor growth substrate 有权
    制造半导体发光器件的方法，其允许半导体生长衬底的再循环

    公开(公告)号：US08846429B2

    公开(公告)日：2014-09-30

    申请号：US13846905

    申请日：2013-03-18

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ki Ho Park ,  Ki Sung Kim ,  Chul Min Kim ,  Suk Ho Yoon ,  Tae Hyun Lee

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L33/00

    CPC分类号： H01L33/0079

    摘要： A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

    摘要翻译： 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。