公开(公告)号：US20230040132A1

公开(公告)日：2023-02-09

申请号：US17741711

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Mo PARK ,  Kyu Bong CHOI ,  Yeon Ho PARK ,  Eun Sil PARK ,  Jin Seok LEE ,  Wang Seop LIM ,  Kyung In CHOI

IPC: H01L21/02 ,  H01L21/8234 ,  H01L21/768

Abstract: A method of manufacturing a semiconductor device includes: forming first to third preliminary active patterns on a substrate to have different intervals therebetween, forming first and second field insulating layers between the first and second preliminary active patterns and between the second and third preliminary active patterns, respectively, and forming first to third gate electrodes respectively on first to third active patterns formed based on the first to third preliminary active patterns, separated by first and second gate isolation structures.

公开(公告)号：US20230086174A1

公开(公告)日：2023-03-23

申请号：US17852658

申请日：2022-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Mo PARK ,  Yeon Ho PARK ,  Eun Sil PARK ,  Jin Seok LEE ,  Wang Seop LIM ,  Kyu Bong CHOI

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/775 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes first and second sheet patterns spaced apart from each other on a first region of the substrate, a first gate electrode extending between the first and second sheet patterns, third and fourth sheet patterns spaced apart from each other on a second region of the substrate, and a second gate electrode extending between the third and fourth sheet patterns. The first gate electrode includes a first work function controlling film, which is between the first and second sheet patterns, and a first filling conductive film on the first work function controlling film. The second gate electrode includes a second work function controlling film, which is between the third and fourth sheet patterns, and a second filling conductive film on the second work function controlling film. A distance between the third and fourth sheet patterns is greater than a distance between the first and second sheet patterns.

公开(公告)号：US20220392781A1

公开(公告)日：2022-12-08

申请号：US17745254

申请日：2022-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Joon KIM ,  Jin Seok LEE ,  Bong Ju LEE ,  Tae Jong YU ,  Tae Sun SHIN ,  Sung Il CHO

IPC: H01L21/67 ,  C23C16/455

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor wafer processing device comprising a chamber, and, a showerhead configured to supply a gas into the chamber, wherein the showerhead includes, a plate, a plurality of first spray hole groups in a first row from a center of the plate, and a second spray hole group in a second row outside the first row, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is an average value of distances from the center of the plate to each spray hole of each of the first spray hole groups, the number of first spray holes where a distance from the center of the plate is smaller than L is more than the number of first spray holes where the distance from the center of the plate is greater than L.