中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.016 seconds)

    SEMICONDUCTOR DEVICE HAVING WORD LINE SEPARATION LAYER
    1.
    发明申请
    SEMICONDUCTOR DEVICE HAVING WORD LINE SEPARATION LAYER 有权

    公开(公告)号：US20210193678A1

    公开(公告)日：2021-06-24

    申请号：US16926045

    申请日：2020-07-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jiye Noh ,  Jinsoo Lim ,  Daehyun Jang ,  Jisung Cheon ,  Sangjun Hong

    IPC: H01L27/11582 ,  H01L27/11565 ,  H01L23/48 ,  H01L23/528

    Abstract: A semiconductor device includes a peripheral circuit structure disposed on a substrate; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack, the lower stack including a plurality of lower insulating layers and a plurality of lower word lines alternately stacked with the lower insulating layers; a plurality of channel structures extending through the lower stack and the upper stack in the cell array area; a pair of separation insulating layers extending vertically through the lower stack and the upper stack and extending in a horizontal direction, the pair of separation insulating layers being spaced apart from each other in a vertical direction; and a word line separation layer disposed at an upper portion of the lower stack and crossing the pair of separation insulating layers when viewed in a plan view, the word line separation layer extending vertically through at least one of the lower word lines.

    Vertical memory devices
    2.
    发明授权
    Vertical memory devices 有权

    公开(公告)号：US11672119B2

    公开(公告)日：2023-06-06

    申请号：US17028029

    申请日：2020-09-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jisung Cheon ,  Jiye Noh ,  Byunggon Park ,  Jinsoo Lim

    IPC: H01L29/788 ,  H01L27/11582 ,  G11C7/18 ,  H01L23/522 ,  H01L27/11565

    CPC classification number: H01L27/11582 ,  G11C7/18 ,  H01L23/5226 ,  H01L27/11565

    Abstract: A vertical memory device includes a gate electrode structure, channels, a charge storage structure, and a division pattern. The gate electrode includes gate electrodes spaced apart from each other in a first direction. The channel extends through the gate electrode structure, and includes a first portion and a second portion on and contacting the first portion. The second portion includes a lower surface having a width less than that of an upper surface of the first portion. The charge storage structure covers an outer sidewall of the channel. The division pattern extends between the channels in a second direction, and includes a first dummy channel and a first dummy charge storage structure covering a sidewall and a lower surface thereof. The first dummy channel includes the same material as that the channel, and the first dummy charge storage structure includes the same material as the charge storage structure.

    SEMICONDUCTOR DEVICE HAVING WORD LINE SEPARATION LAYER
    4.
    发明申请
    SEMICONDUCTOR DEVICE HAVING WORD LINE SEPARATION LAYER 有权

    公开(公告)号：US20230032392A1

    公开(公告)日：2023-02-02

    申请号：US17934959

    申请日：2022-09-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jiye Noh ,  Jinsoo Lim ,  Daehyun Jang ,  Jisung Cheon ,  Sangjun Hong

    IPC: H01L27/11582 ,  H01L27/11565 ,  H01L23/528 ,  H01L23/48

    Abstract: A semiconductor device includes a peripheral circuit structure; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack including a plurality of lower insulating layers and a plurality of lower word lines alternately stacked with the lower insulating layers; a plurality of channel structures extending through the lower stack and the upper stack in the cell array area; a pair of separation insulating layers extending vertically through the lower stack and the upper stack and extending in a horizontal direction, the pair of separation insulating layers being spaced apart from each other in a vertical direction; and a word line separation layer disposed at an upper portion of the lower stack and crossing the pair of separation insulating layers when viewed in a plan view, the word line separation layer extending vertically through at least one of the lower word lines.

    Semiconductor device having word line separation layer
    5.
    发明授权
    Semiconductor device having word line separation layer 有权

    公开(公告)号：US11456316B2

    公开(公告)日：2022-09-27

    申请号：US16926045

    申请日：2020-07-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jiye Noh ,  Jinsoo Lim ,  Daehyun Jang ,  Jisung Cheon ,  Sangjun Hong

    IPC: H01L27/11582 ,  H01L23/48 ,  H01L23/528 ,  H01L27/11573 ,  H01L27/11519 ,  H01L27/11565

    Abstract: A semiconductor device includes a peripheral circuit structure disposed on a substrate; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack, the lower stack including a plurality of lower insulating layers and a plurality of lower word lines alternately stacked with the lower insulating layers; a plurality of channel structures extending through the lower stack and the upper stack in the cell array area; a pair of separation insulating layers extending vertically through the lower stack and the upper stack and extending in a horizontal direction, the pair of separation insulating layers being spaced apart from each other in a vertical direction; and a word line separation layer disposed at an upper portion of the lower stack and crossing the pair of separation insulating layers when viewed in a plan view, the word line separation layer extending vertically through at least one of the lower word lines.

Patent Agency Ranking