公开(公告)号：US20220309216A1

公开(公告)日：2022-09-29

申请号：US17491739

申请日：2021-10-01

申请人： Samsung Electronics Co., Ltd.

发明人： Sangwoon LEE ,  Joohyun JEON ,  Sungjin KIM ,  Seunghyun KIM ,  Wonki ROH ,  Chulwoo PARK ,  Seongjae BYEON ,  Taeyoon AN ,  Hyoeun JUNG

IPC分类号： G06F30/3308 ,  G06F30/25

摘要： A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

公开(公告)号：US20200013853A1

公开(公告)日：2020-01-09

申请号：US16573156

申请日：2019-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Kyuho CHO ,  Sangyeol KANG ,  Suhwan KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC分类号： H01L49/02 ,  H01L21/02

摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20180315811A1

公开(公告)日：2018-11-01

申请号：US15938234

申请日：2018-03-28

申请人： Samsung Electronics Co., Ltd.

发明人： Kyuho CHO ,  SANGYEOL KANG ,  SUHWAN KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC分类号： H01L49/02

CPC分类号： H01L28/75 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02244 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L28/91

摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20170243973A1

公开(公告)日：2017-08-24

申请号：US15391888

申请日：2016-12-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungsam LEE ,  Junsoo KIM ,  Hyoshin AHN ,  Satoru YAMADA ,  Joohyun JEON ,  MoonYoung JEONG ,  Chunhyung CHUNG ,  Min Hee CHO ,  Kyo-Suk CHAE ,  Eunae CHOI

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L29/423

CPC分类号： H01L29/7827 ,  H01L28/00 ,  H01L29/045 ,  H01L29/4236

摘要： A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.