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公开(公告)号：US09887334B1
公开(公告)日：2018-02-06
申请号：US15443202
申请日：2017-02-27
发明人： Joon Woo Jeon , Sang Seok Lee , Hyun Kwon Hong
CPC分类号： H01L33/62 , H01L33/24 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
摘要： A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.
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公开(公告)号：US09412903B2
公开(公告)日：2016-08-09
申请号：US14601190
申请日：2015-01-20
发明人： Ju Heon Yoon , Joon Woo Jeon , Dong Hyuk Joo , Jin Young Choi
CPC分类号： H01L33/14 , H01L33/382 , H01L2224/16225 , H01L2924/10155
摘要： A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.
摘要翻译： 半导体发光器件包括堆叠半导体结构，其包括具有分为第一区域和第二区域的顶表面的第一导电类型半导体层以及顺序地设置在第二区域上的有源层和第二导电类型半导体层 的第一导电型半导体层。 第一和第二接触电极分别设置在第一导电型半导体层和第二导电类型半导体层的第一区域中。 电流扩散层设置在第二接触电极上，并且包括具有第一电阻率的第一导电层和具有小于第一电阻率的第二电阻率的第二导电层。
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公开(公告)号：US10128425B2
公开(公告)日：2018-11-13
申请号：US15863724
申请日：2018-01-05
发明人： Joon Woo Jeon , Sang Seok Lee , Hyun Kwon Hong
摘要： A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.
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