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    HIGH-ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    HIGH-ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动晶体管及其制造方法

    公开(公告)号：US20140097470A1

    公开(公告)日：2014-04-10

    申请号：US13910417

    申请日：2013-06-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-seob KIM ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

    Abstract translation: 根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极 的栅电极。 通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。 耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

    NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR
    3.
    发明申请
    NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR 有权
    正常高电子移动晶体管

    公开(公告)号：US20140091363A1

    公开(公告)日：2014-04-03

    申请号：US13874920

    申请日：2013-05-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Jae-joon OH ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Sun-kyu HWANG

    IPC: H01L29/778

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

    Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

    Abstract translation: 根据示例性实施例，常关高电子迁移率晶体管（HEMT）包括：具有第一氮化物半导体的沟道层，沟道层上的沟道供应层，沟道供应层侧面的源电极和漏电极 沟道供应层上的耗尽形成层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 沟道供给层包括第二氮化物半导体，并且被配置为在沟道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为具有至少两个厚度，并且被配置为在2DEG的至少部分区域中形成耗尽区。 栅电极与耗尽形成层接触。

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