公开(公告)号：US09940991B2

公开(公告)日：2018-04-10

申请号：US15343977

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Joong Kim ,  Ho-young Song ,  Hoi-ju Chung ,  Ju-yun Jung ,  Sang-uhn Cha

IPC: G11C7/00 ,  G11C11/4096 ,  G06F3/06 ,  G11C7/10 ,  G11C11/406 ,  G11C29/02 ,  G11C29/04 ,  G11C29/52 ,  G11C29/50 ,  G11C29/12

CPC classification number: G11C11/4096 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0673 ,  G11C7/1063 ,  G11C11/40611 ,  G11C11/40622 ,  G11C29/025 ,  G11C29/028 ,  G11C29/04 ,  G11C29/50016 ,  G11C29/52 ,  G11C2029/0403 ,  G11C2029/0409 ,  G11C2029/1202 ,  G11C2029/5002 ,  G11C2211/4068

Abstract: Provided are a memory device and a memory system performing request-based refresh, and an operating method of the memory device. The operating method includes: determining a weak row by counting an activated number of at least one row; requesting for refresh on the weak row based on a result of the determining; and performing target refresh on the weak row upon receiving a refresh command according to the requesting.

公开(公告)号：US09859022B2

公开(公告)日：2018-01-02

申请号：US14722823

申请日：2015-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-joong Kim ,  Soo-hyeong Kim ,  Sang-hoon Shin ,  Ju-yun Jung ,  Ho-young Song ,  Kyo-min Sohn ,  Hae-suk Lee ,  Bu-il Jung ,  Han-vit Jeong

IPC: G06F11/10 ,  G11C29/52 ,  G11C29/04

CPC classification number: G11C29/52 ,  G06F11/1048 ,  G11C2029/0411

Abstract: A memory device including: an error correction code (ECC) cell array; an ECC engine configured to receive write data to be written to a memory cell array and generate internal parity bits for the write data; and an ECC select unit configured to receive the internal parity bits and external parity bits and, in response to a first level of a control signal, store the internal parity bits in the ECC cell array and, in response to a second level of the control signal store the external parity bits in the ECC cell array.

公开(公告)号：US10127974B2

公开(公告)日：2018-11-13

申请号：US15909220

申请日：2018-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Joong Kim ,  Ho-young Song ,  Hoi-ju Chung ,  Ju-yun Jung ,  Sang-uhn Cha

IPC: G11C7/00 ,  G11C11/4096 ,  G06F3/06 ,  G11C7/10 ,  G11C11/406 ,  G11C29/02 ,  G11C29/04 ,  G11C29/52 ,  G11C29/50 ,  G11C29/12

Abstract: Provided are a memory device and a memory system performing request-based refresh, and an operating method of the memory device. The operating method includes: determining a weak row by counting an activated number of at least one row; requesting for refresh on the weak row based on a result of the determining; and performing target refresh on the weak row upon receiving a refresh command according to the requesting.