公开(公告)号：US20230040502A1

公开(公告)日：2023-02-09

申请号：US17723845

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byongguk PARK ,  Jeong-Heon PARK ,  Kyung-Jin LEE ,  Jeongchun RYU

IPC: H01L43/04 ,  H01L43/06 ,  H01F10/32 ,  H01L27/22 ,  G11C11/16

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.

公开(公告)号：US20200035279A1

公开(公告)日：2020-01-30

申请号：US16591683

申请日：2019-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA UNIVERSITY Research and Business Foundation

Inventor： Woo Chang LIM ,  Kyung-Jin LEE ,  Gyungchoon GO ,  Seung-Jae LEE

IPC: G11C11/16 ,  G11C11/15 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

公开(公告)号：US20180219986A1

公开(公告)日：2018-08-02

申请号：US15848791

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Jin LEE ,  Il-Jong SONG

IPC: H04M1/02 ,  H02J7/02 ,  H02J7/00 ,  H04B5/00 ,  H02J5/00 ,  H02J50/12

CPC classification number: H04M1/0262 ,  H01M2/1022 ,  H01M2/1055 ,  H01M10/441 ,  H02J5/005 ,  H02J7/0044 ,  H02J7/0054 ,  H02J7/025 ,  H02J50/12 ,  H04B5/0037

Abstract: A mobile device includes at least one internal device including a processor to control the mobile device, an area including a main battery, a first antenna to receive power wirelessly transferred from an auxiliary battery of an accessory coupled to the mobile device, and a power manager. The power manager selects the main battery or the auxiliary battery of the accessory as a power source for the at least one internal device, supplies the at least one internal device with power from the main battery when the main battery is selected as the power source, and supplies the at least one internal device with the power received through the first antenna when the auxiliary battery is selected as the power source.

公开(公告)号：US20180151209A1

公开(公告)日：2018-05-31

申请号：US15659283

申请日：2017-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Chang LIM ,  Kyung-Jin LEE ,  Gyungchoon GO ,  Seung-Jae LEE

IPC: G11C11/16 ,  G11C11/15 ,  H01L27/22 ,  H01L43/08

CPC classification number: G11C11/16 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1693 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.