公开(公告)号：US20150311379A1

公开(公告)日：2015-10-29

申请号：US14735756

申请日：2015-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young CHUNG ,  Kyung-sang CHO ,  Tae-ho KIM ,  Byoung-lyong CHOI

IPC: H01L33/00

CPC classification number: H01L33/005 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L31/035218 ,  H01L33/06 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0041

Abstract: A method of manufacturing a quantum dot (QD) device includes: forming a first QD solution obtained by dispersing a plurality of QDs in a mixture of a solvent and an anti-solvent; and forming a first QD layer on a substrate structure by applying the first QD solution onto the substrate structure and naturally evaporating the first QD solution.

Abstract translation: 制造量子点（QD）装置的方法包括：形成通过将多个QD分散在溶剂和反溶剂的混合物中获得的第一QD溶液; 以及通过将第一QD溶液施加到衬底结构上并自然地蒸发第一QD溶液，在衬底结构上形成第一QD层。

公开(公告)号：US20140054541A1

公开(公告)日：2014-02-27

申请号：US13858136

申请日：2013-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young CHUNG ,  Kyung-sang CHO ,  Tae-ho KIM ,  Byoung-lyong CHOI

IPC: H01L33/06 ,  H01L33/00

CPC classification number: H01L33/005 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L31/035218 ,  H01L33/06 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0041

Abstract: A method of manufacturing a quantum dot (QD) device includes: forming a first QD solution obtained by dispersing a plurality of QDs in a mixture of a solvent and an anti-solvent; and forming a first QD layer on a substrate structure by applying the first QD solution onto the substrate structure and naturally evaporating the first QD solution.

Abstract translation: 制造量子点（QD）装置的方法包括：形成通过将多个QD分散在溶剂和反溶剂的混合物中获得的第一QD溶液; 以及通过将第一QD溶液施加到衬底结构上并自然地蒸发第一QD溶液，在衬底结构上形成第一QD层。

公开(公告)号：US20180093892A1

公开(公告)日：2018-04-05

申请号：US15819576

申请日：2017-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Kyung-sang CHO ,  Sang-wook KIM ,  Tae-ho KIM ,  Dong-hyeok CHOI ,  Byoung-lyong CHOI

IPC: C01B17/20 ,  C01B19/00 ,  C01G1/12 ,  C01G11/02

CPC classification number: C01B17/20 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01B19/007 ,  C01G1/12 ,  C01G11/02 ,  C01P2002/86 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/90

Abstract: Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle

公开(公告)号：US20140374699A1

公开(公告)日：2014-12-25

申请号：US14310435

申请日：2014-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyung-sang CHO ,  Young KUK ,  Seong-joon LIM ,  Byoung-lyong CHOI

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L27/305 ,  B82Y20/00 ,  H01L27/288 ,  H01L27/32 ,  H01L51/004 ,  H01L51/006 ,  H01L51/4213 ,  H01L51/426 ,  H01L51/502 ,  H01L51/52 ,  H04B10/70

Abstract: Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside.

Abstract translation: 提供单光子器件，单光子发射和转移设备以及制造和操作单个光子器件的方法。 单光子器件包括设置在导电衬底上的载流子传输层和设置在载流子传输层上的至少一个量子点。 单光子发射和转移装置包括单个光子器件，将单个电荷注入到上述单个光子器件中的元件，收集从单个光子器件发射的光的光收集单元和透射光的光传输系统 由光收集单元收集到外部。

公开(公告)号：US20140151612A1

公开(公告)日：2014-06-05

申请号：US14096585

申请日：2013-12-04

Applicant: AJOU UNIVERSITY INDUSTRY COOPERATION FOUNDATION ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-sang CHO ,  Sang-wook KIM ,  Tae-ho KIM ,  Dong-hyeok CHOI ,  Byoung-lyong CHOI

IPC: C01B19/04 ,  H01L49/02

CPC classification number: C01B17/20 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01B19/007 ,  C01G1/12 ,  C01G11/02 ,  C01P2002/86 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/90

Abstract: Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle

Abstract translation: 提供了用阳离子金属 - 硫族化物复合物（MCC）钝化的纳米颗粒及其制备方法。 钝化的纳米颗粒包括：核心纳米颗粒; 和阳离子金属 - 硫族化物化合物（MCC）固定在芯纳米颗粒的表面上

公开(公告)号：US20140014896A1

公开(公告)日：2014-01-16

申请号：US13791213

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young CHUNG ,  Kyung-sang CHO

IPC: H01L33/14 ,  H01L33/04

CPC classification number: H01L33/14 ,  H01L33/04 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/502 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5265 ,  H01L2251/5369 ,  H01L2251/558

Abstract: A light emitting device using charge accumulation and a method of manufacturing the light emitting device are provided. The light emitting device includes a substrate, a first electrode formed on the substrate, a hole transport layer formed on the first electrode, an electron transport layer formed on the hole transport layer, and a second electrode formed on the electron transport layer. A thickness of the hole transport layer may be greater than 20 nm and a thickness of the electron transport layer may be greater than 40 nm. A quantum dot (QD) layer may be disposed between the hole transport layer and the electron transport layer.

Abstract translation: 提供了使用电荷累积的发光器件和制造发光器件的方法。 发光器件包括衬底，形成在衬底上的第一电极，形成在第一电极上的空穴传输层，形成在空穴传输层上的电子传输层和形成在电子传输层上的第二电极。 空穴传输层的厚度可以大于20nm，并且电子传输层的厚度可以大于40nm。 量子点（QD）层可以设置在空穴传输层和电子传输层之间。