公开(公告)号：US20150146485A1

公开(公告)日：2015-05-28

申请号：US14614992

申请日：2015-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moosung KIM ,  Ohsuk KWON

IPC: G11C11/56

CPC classification number: G11C16/12 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C7/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/24 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

Abstract translation: 根据示例实施例的非易失性存储器件的编程方法包括检测编程电压电平的操作（a） 以及根据检测到的编程电压的电平分别提供具有可变电平的未选字线电压和位线预充电电压的操作（b）。

公开(公告)号：US20150287466A1

公开(公告)日：2015-10-08

申请号：US14741582

申请日：2015-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moosung KIM ,  Ohsuk KWON

IPC: G11C16/12 ,  G11C16/04 ,  G06F12/02 ,  G11C11/56

CPC classification number: G11C16/12 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C7/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/24 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

公开(公告)号：US20150179238A1

公开(公告)日：2015-06-25

申请号：US14468936

申请日：2014-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Soo PARK ,  Moosung KIM ,  Taekyun KANG

IPC: G11C7/10 ,  G11C5/14

CPC classification number: G11C7/20 ,  G11C5/148 ,  G11C16/30 ,  G11C2207/2227

Abstract: A latch management method of a storage device includes permitting the storage device to enter a reduced power mode in which the storage device operates with a reduced power. The method includes reading initial latch data stored in the at least one nonvolatile memory device in response to the entering operation. The method includes setting latches associated with the at least one nonvolatile memory device based on the read initial latch data.

Abstract translation: 存储装置的锁存管理方法包括允许存储装置进入存储装置以降低的功率运行的降低功率模式。 该方法包括响应于输入操作读取存储在至少一个非易失性存储器件中的初始锁存数据。 该方法包括基于读取的初始锁存数据来设置与至少一个非易失性存储器件相关联的锁存器。

公开(公告)号：US20130308391A1

公开(公告)日：2013-11-21

申请号：US13949833

申请日：2013-07-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moosung KIM ,  Ohsuk KWON

IPC: G11C16/10

CPC classification number: G11C16/12 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C7/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/24 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.