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1.发明授权公开(公告)号：US12062402B2
公开(公告)日：2024-08-13
申请号：US17385493
申请日：2021-07-26
发明人： Byungsoo Kim , Hyunggon Kim , Kyungsoo Park , Sejin Baek , Sangbum Yun
CPC分类号： G11C16/3459 , G11C16/0433 , G11C16/08 , G11C16/102 , G11C16/24 , G11C16/26 , G11C16/30
摘要： A non-volatile memory device including a memory cell array including a plurality of cell strings, wherein each cell string of the plurality of cell stings includes a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series between a bit line and a common source line; and a control circuit configured to perform a program operation on a selected memory cell from among the plurality of memory cells and pre-charge a selected cell string including the selected memory cell in a pre-charge section included in a verification section, wherein the selected cell string is pre-charged as a first pre-charge voltage is applied to a selected bit line connected to the selected memory cell.
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2.发明授权公开(公告)号：US11626171B2
公开(公告)日：2023-04-11
申请号：US17201828
申请日：2021-03-15
发明人： Joonsuc Jang , Hyunggon Kim , Sangbum Yun , Dongwook Kim , Kyungsoo Park , Sejin Baek
摘要： A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.
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3.发明授权公开(公告)号：US11823753B2
公开(公告)日：2023-11-21
申请号：US18128596
申请日：2023-03-30
发明人： Joonsuc Jang , Hyunggon Kim , Sangbum Yun , Dongwook Kim , Kyungsoo Park , Sejin Baek
CPC分类号： G11C16/3459 , G11C7/106 , G11C7/1045 , G11C7/1048 , G11C7/1087 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/30
摘要： A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.
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