公开(公告)号：US20230154894A1

公开(公告)日：2023-05-18

申请号：US17862496

申请日：2022-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jegwan HWANG ,  Jihyung KIM ,  Jeong Hoon AHN ,  Jaehee OH ,  Shaofeng DING ,  Won Ji PARK ,  WooSeong JANG ,  Seokjun HONG

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/528

CPC classification number: H01L25/0657 ,  H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L25/50 ,  H01L23/5286 ,  H01L2224/05567 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L24/73 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L24/06 ,  H01L2224/06181 ,  H01L24/17 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2224/16225 ,  H01L2225/06544 ,  H01L25/18

Abstract: A three-dimensional integrated circuit structure including: a first die including a first power delivery network, a first substrate, a first device layer, and a first metal layer; a second die on the first die, the second die including a second power delivery network, a second substrate, a second device layer, and a second metal layer; a first through electrode extending from the first power delivery network to a top surface of the first metal layer; and a first bump on the first through electrode, the second power delivery network including: lower lines to transfer power to the second device layer; and a pad connected to a lowermost one of the lower lines, the first bump is interposed between and connects the first through electrode and the pad, and the first power delivery network is connected to the second power delivery network through the first bump and the first through electrode.

公开(公告)号：US20210283744A1

公开(公告)日：2021-09-16

申请号：US17026554

申请日：2020-09-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hojoong KIM ,  Taesung KIM ,  Seokjun HONG ,  Junyong KIM ,  Donghyuk JANG ,  Youngjin HONG

IPC: B24B37/26

Abstract: A chemical mechanical polishing (CMP) apparatus and a CMP pad, the apparatus including a rotating plate; a CMP pad on an upper surface of the rotating plate; a rotating body facing the rotating plate and bringing a wafer into contact with the CMP pad to press the wafer; and a slurry supply configured to supply slurry to the CMP pad, wherein the CMP pad includes a pad body having a circular plate shape; a plurality of circular grooves on a bottom surface of the pad body, the plurality of circular grooves having a circular shape; and a connection groove connecting the plurality of circular grooves, the connection groove having a linear shape.

公开(公告)号：US20240014068A1

公开(公告)日：2024-01-11

申请号：US18217724

申请日：2023-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yanghee LEE ,  Byoungho KWON ,  Jonghyuk PARK ,  Boun YOON ,  Ilyoung YOON ,  Seokjun HONG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H10B12/00

CPC classification number: H01L21/76832 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53266 ,  H01L23/53238 ,  H01L21/76816 ,  H01L23/53295 ,  H10B12/315

Abstract: A semiconductor device includes a lower structure; an intermediate insulating structure on the lower structure; an intermediate interconnection structure penetrating through the intermediate insulating structure; an upper insulating structure on the intermediate insulating structure and the intermediate interconnection structure; and an upper conductive pattern penetrating through the upper insulating structure and electrically connected to the intermediate interconnection structure, wherein the intermediate insulating structure includes an intermediate etch-stop layer and an intermediate insulating layer thereon, the intermediate insulating layer includes first and second intermediate material layers, the second intermediate material layer having an upper surface coplanar with an upper surface of the first intermediate material layer, the intermediate interconnection structure penetrates through the first intermediate material layer and the intermediate etch-stop layer, and a material of the first intermediate material layer has a dielectric constant that is higher than a dielectric constant of a material of the second intermediate material layer.