公开(公告)号：US09837272B2

公开(公告)日：2017-12-05

申请号：US15092263

申请日：2016-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-Min Park ,  Su-Min Kim ,  Hyo-Jin Yun ,  Hyun-Woo Kim ,  Kyoung-Seon Kim ,  Hai-Sub Na ,  Min-Ju Park ,  So-Ra Han

IPC: H01L21/302 ,  H01L21/461 ,  H01B13/00 ,  B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/033 ,  H01L21/322 ,  H01L21/426 ,  H01L21/425 ,  H01L21/311 ,  H01L27/108

CPC classification number: H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3223 ,  H01L21/425 ,  H01L21/426 ,  H01L27/10855 ,  H01L27/10888

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

公开(公告)号：US09570304B2

公开(公告)日：2017-02-14

申请号：US14965255

申请日：2015-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ju Park ,  Haisub Na ,  Hyojin Yun ,  Kyoungseon Kim ,  Su Min Kim ,  Hyunwoo Kim ,  Su-min Park ,  So-Ra Han

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在下层上形成抗反射层，在抗反射层上形成光致抗蚀剂图案，分别形成保护图案以覆盖光致抗蚀剂图案，使用被保护图案覆盖的光刻胶图案蚀刻抗反射层 作为蚀刻掩模以形成抗反射图案，形成隔离物以覆盖抗反射图案的侧壁，以及去除防反射图案。

公开(公告)号：US20160293417A1

公开(公告)日：2016-10-06

申请号：US14965255

申请日：2015-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ju Park ,  Haisub Na ,  Hyojin Yun ,  Kyoungseon Kim ,  Su Min Kim ,  Hyunwoo Kim ,  Su Min Park ,  So-Ra Han

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在下层上形成抗反射层，在抗反射层上形成光致抗蚀剂图案，分别形成保护图案以覆盖光致抗蚀剂图案，使用被保护图案覆盖的光刻胶图案蚀刻抗反射层 作为蚀刻掩模以形成抗反射图案，形成隔离物以覆盖抗反射图案的侧壁，以及去除防反射图案。