公开(公告)号：US20190371779A1

公开(公告)日：2019-12-05

申请号：US16185602

申请日：2018-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hye YEON ,  Su Hyun JO ,  Sung Hyun SIM ,  Ha Nul YOO ,  Yong Il KIM ,  Han Kyu SEONG

IPC: H01L25/00 ,  H01L25/18 ,  H01L23/00 ,  H01L33/50

Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

公开(公告)号：US20200328329A1

公开(公告)日：2020-10-15

申请号：US16913201

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun SIM ,  Yong II KIM ,  Ha Nul YOO ,  Ji Hye YEON ,  Jun Bu YOUN ,  Ji Hoon YUN ,  Su Hyun JO

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/60

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

公开(公告)号：US20140008665A1

公开(公告)日：2014-01-09

申请号：US13933887

申请日：2013-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Hyun JO ,  Jong Ho LEE ,  Jin Hyun LEE ,  Chan Mook LIM ,  Jin Hwan KIM

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/005 ,  H01L33/20 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.

Abstract translation: 一种制造具有多单元阵列的半导体发光器件的方法，包括：在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分，以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元，其中在所述基板的边缘部分处不发生所述发光单元的分离。

公开(公告)号：US20210351330A1

公开(公告)日：2021-11-11

申请号：US17385193

申请日：2021-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun SIM ,  Yong II KIM ,  Ha Nul YOO ,  Ji Hye YEON ,  Jun Bu YOUN ,  Ji Hoon YUN ,  Su Hyun JO

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/60

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

公开(公告)号：US20140219304A1

公开(公告)日：2014-08-07

申请号：US14154556

申请日：2014-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Ho LEE ,  Chan Mook LIM ,  Young Chul SHIN ,  Su Hyun JO

IPC: H01L33/62 ,  H01S5/02

CPC classification number: H01S5/02 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44

Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

Abstract translation: 半导体发光器件包括导电衬底，层叠在导电衬底上的第二导电型半导体层，有源层和第一导电型半导体层的发光层叠体，与第一导电型电连接的第一电极层 半导体层，在导电基板和第二导电类型半导体层之间的第二电极层，第二电极层电连接到第二导电类型半导体层，以及在有源层和第二电极层之间的钝化层，钝化层 层覆盖发光层压板的有源层的至少一个侧表面。

公开(公告)号：US20200105980A1

公开(公告)日：2020-04-02

申请号：US16299422

申请日：2019-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun SIM ,  Yong Il KIM ,  Ha Nul YOO ,  Ji Hye YEON ,  Jun Bu YOUN ,  Ji Hoon YUN ,  Su Hyun JO

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/54

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

公开(公告)号：US20130113006A1

公开(公告)日：2013-05-09

申请号：US13670129

申请日：2012-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun KIM ,  Gi Bum KIM ,  Bum Joon KIM ,  Seung Wan CHAE ,  Su Hyun JO ,  Sang Yeob SONG

IPC: H01L33/60

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405

Abstract: A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has an impurity concentration higher than that of the first p-type semiconductor layer. The second p-type semiconductor layer is disposed on the first p-type semiconductor layer and has an uneven structure formed on a surface thereof. A reflective metal layer is formed on the second p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的有源层和设置在有源层上的第一p型半导体层。 第一p型半导体层在其表面上形成有不均匀结构。 第二p型半导体层的杂质浓度高于第一p型半导体层的杂质浓度。 第二p型半导体层设置在第一p型半导体层上，并且具有形成在其表面上的不均匀结构。 反射金属层形成在第二p型半导体层上。