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1.发明授权公开(公告)号：US11186749B2
公开(公告)日：2021-11-30
申请号：US16879283
申请日：2020-05-20
发明人： Boyun Kim , Yeryung Jeon , Boun Yoon , Taek Dong Chung , Jae Gyeong Lee , Jin-Young Lee
IPC分类号： C09G1/02 , C09G1/04 , C09K15/02 , H01L21/768 , H01L21/321 , C09G1/00 , H01L21/306 , C09K3/14 , B24B1/00 , C09G1/06 , C09K13/06 , B24B37/04
摘要： A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.
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公开(公告)号：US11094586B2
公开(公告)日：2021-08-17
申请号：US16539064
申请日：2019-08-13
发明人： Seung Hoon Choi , Jaeung Koo , Kwansung Kim , Bo Yun Kim , Wandon Kim , Boun Yoon , Jeonghyuk Yim , Yeryung Jeon
IPC分类号： H01L21/768 , H01L27/105 , H01L23/528 , H01L23/532 , H01L21/3105
摘要： A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device including a semiconductor substrate including a first region and a second region; an interlayer insulating layer on the semiconductor substrate, the interlayer insulating layer including a first opening on the first region and having a first width; and a second opening on the second region and having a second width, the second width being greater than the first width; at least one first metal pattern filling the first opening; a second metal pattern in the second opening; and a filling pattern on the second metal pattern in the second opening, wherein the at least one first metal pattern and the second metal pattern each include a same first metal material, and the filling pattern is formed of a non-metal material.
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