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公开(公告)号:US11968648B2
公开(公告)日:2024-04-23
申请号:US17969166
申请日:2022-10-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yongin Choi , Yangsoo Kwon , Joonsung Kim , Jinwoo Oh
IPC: H04W4/40 , H04B17/318 , H04B17/336 , H04L1/1812 , H04L5/00 , H04W24/10 , H04W72/02 , H04W72/0446
CPC classification number: H04W72/02 , H04B17/318 , H04B17/336 , H04L1/1819 , H04L5/0055 , H04W4/40 , H04W24/10 , H04W72/0446
Abstract: An operating method of a terminal configured to perform vehicle-to-everything (V2X) communication in a wireless communication system, including signaling a maximum physical sidelink feedback channel (PSFCH) receiving capability to a base station; and receiving a wireless signal transmitted from the base station based on the maximum PSFCH receiving capability, wherein the maximum PSFCH receiving capability is a maximum number of PSFCHs receivable during one time transmission interval (TTI).
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公开(公告)号:US11569957B2
公开(公告)日:2023-01-31
申请号:US16991567
申请日:2020-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yangsoo Kwon , Joonsung Kim , Yongin Choi
Abstract: A method of receiving a downlink control channel in a user equipment may include receiving, using two or more antenna ports, a shortened physical downlink control channel (PDCCH) transmitted using a space-frequency block code (SFBC), by using at least one shortened control channel element (SCCE) for shortened transmission time interval (STTI) transmission; and monitoring the shortened PDCCH. The at least one SCCE may include at least one shortened resource element group (REG) including a number of resource elements (REs), where the number is unequal to an integer multiple of the number of antenna ports allocated to the shortened PDCCH.
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公开(公告)号:US20220278049A1
公开(公告)日:2022-09-01
申请号:US17664132
申请日:2022-05-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonsung Kim , Doohwan Lee , Taeho Ko , Bongsoo Kim , Seokbong Park
IPC: H01L23/538 , H01L23/31 , H01L23/66 , H01L23/00 , H01L25/065 , H01L25/10 , H01L21/683 , H01L21/48 , H01L21/56 , H01P3/08 , H01P11/00 , H01L23/29
Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.
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公开(公告)号:US11127646B2
公开(公告)日:2021-09-21
申请号:US16681320
申请日:2019-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonsung Kim , Doohwan Lee , Jinseon Park
IPC: H01L23/31 , H01L23/13 , H01L23/498 , H01L23/552 , H01L25/10 , H01L23/538 , H01L23/495 , H01L23/00
Abstract: A fan-out semiconductor package includes a semiconductor chip, an encapsulant covering the semiconductor chip, a connection structure disposed below the semiconductor chip, and first and second metal pattern layers disposed on different levels on the semiconductor chip, wherein the first metal pattern layer is provided to electrically connect to an electrical connection member such as a frame, provided for electrical connection of the package in a vertical direction by a path via the second metal pattern layer.
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公开(公告)号:US20200161204A1
公开(公告)日:2020-05-21
申请号:US16681320
申请日:2019-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonsung Kim , Doohwan Lee , Jinseon Park
IPC: H01L23/31 , H01L23/13 , H01L23/498 , H01L23/00
Abstract: A fan-out semiconductor package includes a semiconductor chip, an encapsulant covering the semiconductor chip, a connection structure disposed below the semiconductor chip, and first and second metal pattern layers disposed on different levels on the semiconductor chip, wherein the first metal pattern layer is provided to electrically connect to an electrical connection member such as a frame, provided for electrical connection of the package in a vertical direction by a path via the second metal pattern layer.
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公开(公告)号:US12159833B2
公开(公告)日:2024-12-03
申请号:US18151731
申请日:2023-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonsung Kim , Khaile Kim
IPC: H01L23/528 , H01L23/00 , H01L23/31 , H01L23/498
Abstract: A fan-out semiconductor package includes a frame substrate having a through hole therein, a semiconductor chip in the through hole, wherein the semiconductor chip includes a chip body, a chip pad on a surface of the chip body and a passivation layer on the chip body and on the chip pad, an encapsulation layer on side surfaces of the semiconductor chip within the through hole, and a guard ring on the passivation layer and on an edge portion of the chip body.
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公开(公告)号:US20240363542A1
公开(公告)日:2024-10-31
申请号:US18765648
申请日:2024-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonsung Kim
IPC: H01L23/538 , H01L23/00 , H01L23/31 , H01L23/34 , H01L23/522
CPC classification number: H01L23/5383 , H01L23/3121 , H01L23/34 , H01L23/5226 , H01L23/5386 , H01L24/08 , H01L23/3171 , H01L2224/08235
Abstract: A semiconductor package includes a first semiconductor chip including a first semiconductor substrate and a first chip pad on a first bottom surface of the first semiconductor substrate, a second semiconductor chip including a second semiconductor substrate and a second chip pad on a second top surface of the second semiconductor substrate, a lower redistribution structure provided under the first semiconductor chip and the second semiconductor chip, the lower redistribution structure including a lower redistribution pattern, the lower redistribution pattern including a first lower redistribution via pattern contacting the first chip pad, a molding layer covering the first semiconductor chip and the second semiconductor chip, an upper redistribution structure including an upper redistribution pattern, the upper redistribution pattern including a first upper redistribution via pattern connected to the second chip pad, and a conductive connection structure electrically connecting the lower redistribution pattern to the upper redistribution pattern.
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公开(公告)号:US11798862B2
公开(公告)日:2023-10-24
申请号:US17354291
申请日:2021-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunseok Cho , Minjeong Gu , Joonsung Kim , Jaehoon Choi
IPC: H01L23/367 , H01L23/498 , H01L23/552 , H01L21/48 , H01L21/56 , H01L23/00 , H01L25/18 , H01L25/065 , H01L23/31
CPC classification number: H01L23/3675 , H01L21/486 , H01L21/4853 , H01L21/4857 , H01L21/4871 , H01L21/563 , H01L23/3185 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/49838 , H01L23/552 , H01L24/16 , H01L25/0655 , H01L25/18 , H01L2224/16227 , H01L2924/1431 , H01L2924/1434 , H01L2924/1616 , H01L2924/18161 , H01L2924/19105 , H01L2924/3025 , H01L2924/30111
Abstract: A semiconductor package includes a base substrate including a wiring pattern, an interposer substrate including lower and upper redistribution patterns, a semiconductor structure, a heat dissipation structure, a plurality of external connection bumps disposed on a lower surface of the base substrate, a plurality of lower connection bumps disposed between the base substrate and the interposer substrate, and a plurality of upper connection bumps disposed between the interposer substrate and the semiconductor structure.
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公开(公告)号:US11689262B2
公开(公告)日:2023-06-27
申请号:US17539769
申请日:2021-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongin Choi , Yangsoo Kwon , Joonsung Kim , Jinwoo Oh , Mingoo Kim , Inhyoung Kim , Youngseok Jung , Jinwon Choi
CPC classification number: H04B7/0615 , H04B7/0639 , H04B7/0695
Abstract: An operating method of a communication device for providing a beamformed transmission signal to a plurality of terminals may include determining a target transmission vector based on an area restriction condition for each of the plurality of terminals, generating a beam selection matrix for selecting some of a plurality of antennas based on the target transmission vector and a beam selection condition, generating a precoding matrix based on the target transmission vector and the beam selection matrix, and generating a transmission signal based on the beam selection matrix and the precoding matrix.
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公开(公告)号:US11574868B2
公开(公告)日:2023-02-07
申请号:US17022718
申请日:2020-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonsung Kim , Khaile Kim
IPC: H01L23/00 , H01L23/528 , H01L23/31 , H01L23/498
Abstract: A fan-out semiconductor package includes a frame substrate having a through hole therein, a semiconductor chip in the through hole, wherein the semiconductor chip includes a chip body, a chip pad on a surface of the chip body and a passivation layer on the chip body and on the chip pad, an encapsulation layer on side surfaces of the semiconductor chip within the through hole, and a guard ring on the passivation layer and on an edge portion of the chip body.
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