公开(公告)号：US20180053661A1

公开(公告)日：2018-02-22

申请号：US15443378

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： MIN-JOON PARK ,  TAE-HWA KIM ,  JAE-HYUN LEE ,  SANG-DONG KWON

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32715 ,  H01J2237/334 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67069

Abstract: Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.