公开(公告)号：US12077681B2

公开(公告)日：2024-09-03

申请号：US17695022

申请日：2022-03-15

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ji Ho Lee ,  Young Gi Lee ,  Soo Yeon Sim ,  Hyun Woo Lee ,  Chang Suk Lee ,  Jong Won Lee

IPC: C09G1/04 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  B01J23/745 ,  B82Y40/00 ,  H01L21/304

CPC classification number: C09G1/04 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  B01J23/745 ,  B82Y40/00 ,  H01L21/304

Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition comprising a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less.