公开(公告)号：US12077681B2

公开(公告)日：2024-09-03

申请号：US17695022

申请日：2022-03-15

申请人： SAMSUNG SDI CO., LTD.

发明人： Ji Ho Lee ,  Young Gi Lee ,  Soo Yeon Sim ,  Hyun Woo Lee ,  Chang Suk Lee ,  Jong Won Lee

IPC分类号： C09G1/04 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  B01J23/745 ,  B82Y40/00 ,  H01L21/304

CPC分类号： C09G1/04 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  B01J23/745 ,  B82Y40/00 ,  H01L21/304

摘要： A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition comprising a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less.

公开(公告)号：US09328056B2

公开(公告)日：2016-05-03

申请号：US14697757

申请日：2015-04-28

申请人： Samsung SDI Co., Ltd.

发明人： Yeon Ju Lee ,  Dong Baek Kim ,  Jong Won Lee ,  Chang Hoon Lee

IPC分类号： C07C68/04

CPC分类号： C07C68/04 ,  Y02P20/142 ,  C07C69/96

摘要： A method for preparing a carbonic ester includes reacting carbon dioxide and a C1 to C10 alcohol with an organometallic compound represented by Formula 1. With the method, carbonic ester can be prepared in high yield without recycling the organometallic compound. M(OR1)4  [Formula 1] wherein M is a Group IV or Group XIV element and each R1 is independently a C1 to C10 hydrocarbon group.

摘要翻译： 制备碳酸酯的方法包括使二氧化碳和C1至C10醇与式1表示的有机金属化合物反应。用该方法可以高产率制备碳酸酯而不使有机金属化合物再循环。 M（OR 1）4 [式1]其中M是IV或XIV族，每个R 1独立地是C 1至C 10烃基。

公开(公告)号：US11746258B2

公开(公告)日：2023-09-05

申请号：US17072385

申请日：2020-10-16

申请人： SAMSUNG SDI CO., LTD.

发明人： Hyeong Mook Kim ,  Keun Sam Jang ,  Dong Hun Kang ,  Jong Won Lee

IPC分类号： C09G1/02 ,  C09K13/06 ,  C23F3/00 ,  H01L21/321 ,  C01B33/12

CPC分类号： C09G1/02 ,  C09K13/06 ,  C23F3/00 ,  H01L21/3212 ,  C01B33/12

摘要： A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,

公开(公告)号：US11560495B2

公开(公告)日：2023-01-24

申请号：US17155366

申请日：2021-01-22

申请人： SAMSUNG SDI CO., LTD.

发明人： Won Jung Kim ,  Yoon Young Koo ,  Tae Won Park ,  Eui Rang Lee ,  Jong Won Lee ,  Youn Jin Cho

IPC分类号： C09G1/02 ,  C09G1/18 ,  H01L21/3213

摘要： A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.