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公开(公告)号:US10287468B2
公开(公告)日:2019-05-14
申请号:US15326199
申请日:2015-06-10
发明人: Yong Sik Yoo , Jung Min Choi , Dong Hun Kang , Tae Wan Kim , Go Un Kim , Yong Kuk Kim
IPC分类号: C09K3/14 , H01L21/304 , H01L21/3105
摘要: The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.
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公开(公告)号:US10723916B2
公开(公告)日:2020-07-28
申请号:US16100561
申请日:2018-08-10
发明人: Jung Min Choi , Haruki Nojo , Yong Soon Park , Yong Sik Yoo , Dong Hun Kang , Go Un Kim , Tae Wan Kim
IPC分类号: C09G1/02 , C09G1/06 , C09G1/00 , C09K3/14 , C09K13/06 , C09G1/04 , B24B37/04 , H01L21/321 , H01L21/3105 , B24B1/00 , H01L21/306
摘要: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.
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