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公开(公告)号：US10607853B2
公开(公告)日：2020-03-31
申请号：US15528972
申请日：2015-10-12
发明人： Jong Il Noh , Dong Hun Kang , Jeong Hwan Jeong , Young Nam Choi
IPC分类号： H01L21/321 , C09K3/14 , H01L21/304 , C09G1/04 , C09G1/02 , H01L21/306
摘要： The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m2/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.
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公开(公告)号：US10287468B2
公开(公告)日：2019-05-14
申请号：US15326199
申请日：2015-06-10
发明人： Yong Sik Yoo , Jung Min Choi , Dong Hun Kang , Tae Wan Kim , Go Un Kim , Yong Kuk Kim
IPC分类号： C09K3/14 , H01L21/304 , H01L21/3105
摘要： The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.
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公开(公告)号：US10723916B2
公开(公告)日：2020-07-28
申请号：US16100561
申请日：2018-08-10
发明人： Jung Min Choi , Haruki Nojo , Yong Soon Park , Yong Sik Yoo , Dong Hun Kang , Go Un Kim , Tae Wan Kim
IPC分类号： C09G1/02 , C09G1/06 , C09G1/00 , C09K3/14 , C09K13/06 , C09G1/04 , B24B37/04 , H01L21/321 , H01L21/3105 , B24B1/00 , H01L21/306
摘要： The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.
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公开(公告)号：US10150890B2
公开(公告)日：2018-12-11
申请号：US15525321
申请日：2015-12-07
发明人： Jeong Hwan Jeong , Young Chul Jung , Dong Hun Kang , Tae Wan Kim , Jong Il Noh , Chang Ki Hong
IPC分类号： C09G1/02 , B24B37/04 , C09K3/14 , C23F3/04 , H01L21/321
摘要： Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.
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5.发明授权公开(公告)号：US11746258B2
公开(公告)日：2023-09-05
申请号：US17072385
申请日：2020-10-16
发明人： Hyeong Mook Kim , Keun Sam Jang , Dong Hun Kang , Jong Won Lee
IPC分类号： C09G1/02 , C09K13/06 , C23F3/00 , H01L21/321 , C01B33/12
CPC分类号： C09G1/02 , C09K13/06 , C23F3/00 , H01L21/3212 , C01B33/12
摘要： A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,
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