公开(公告)号：US20180240966A1

公开(公告)日：2018-08-23

申请号：US15440129

申请日：2017-02-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Neil Smith ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.

公开(公告)号：US09941331B1

公开(公告)日：2018-04-10

申请号：US15414961

申请日：2017-01-25

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Jordan Asher Katine ,  Christopher J. Petti ,  Yangyin Chen

IPC: H01L29/82 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L27/226 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2481 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A method is provided that includes forming a first level above a substrate, forming a second level above the first level, and forming a third level above the second level. The first level includes a plurality of first elements having a first minimum pitch, the second level includes a plurality of second elements having a second minimum pitch greater than the first minimum pitch, and the third level includes a plurality of third elements having a third minimum pitch greater than the first minimum pitch. The second elements are disposed above and aligned with a first plurality of the first elements, and the third elements are disposed above and aligned with a second plurality of the first elements.

公开(公告)号：US10211393B2

公开(公告)日：2019-02-19

申请号：US15440129

申请日：2017-02-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Neil Smith ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G11C11/18

Abstract: An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.