公开(公告)号：US20240074170A1

公开(公告)日：2024-02-29

申请号：US17823639

申请日：2022-08-31

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takashi YUDA ,  Noriyuki NAGAHATA ,  Ippei YASUDA

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers arranged along a vertical direction, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film. The memory film includes a blocking dielectric film, a tunneling dielectric layer and a vertical stack of memory elements located between the blocking dielectric film and the tunneling dielectric layer. The blocking dielectric film includes component layers which include, from a side that is proximal to the vertical stack of memory elements toward a side that is distal from the vertical stack of memory elements, an inner silicon oxide blocking dielectric layer, a middle dielectric metal oxide blocking dielectric layer, an outer silicon oxide blocking dielectric layer, and an outer dielectric metal oxide blocking dielectric layer.

公开(公告)号：US20230354608A1

公开(公告)日：2023-11-02

申请号：US18344411

申请日：2023-06-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Noriyuki NAGAHATA ,  Masanori TSUTSUMI ,  Fei ZHOU ,  Raghuveer S. MAKALA

IPC: H10B43/27 ,  G11C16/04 ,  H10B43/10 ,  H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H01L21/768

CPC classification number: H10B43/27 ,  G11C16/0483 ,  H10B43/10 ,  H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H01L21/76843

Abstract: A method of forming a memory device includes forming an alternating stack of disposable material layers and silicon nitride layers over a substrate, forming a memory opening through the alternating stack, forming a memory film in the memory opening, forming a vertical semiconductor channel over the memory film in the memory opening, forming a backside trench through the alternating stack, forming laterally-extending cavities by removing the disposable material layers selective to the silicon nitride layers through the backside trench, oxidizing portions of the silicon nitride layers exposed in the laterally-extending cavities to form insulating layers, and replacing remaining portions of the silicon nitride layers with electrically conductive layers.

公开(公告)号：US20220109003A1

公开(公告)日：2022-04-07

申请号：US17064834

申请日：2020-10-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Noriyuki NAGAHATA ,  Takashi YUDA ,  Ryousuke ITOU

IPC: H01L27/11582

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a memory film and a vertical semiconductor channel. The memory film includes a tunneling dielectric layer, a charge storage layer that laterally surrounds the tunneling dielectric layer, a dielectric metal oxide blocking dielectric layer that laterally surrounds the charge storage layer and contacts the vertical semiconductor channel, and a silicon oxide blocking dielectric layer that laterally surrounds the dielectric metal oxide blocking dielectric layer and contacts the vertical semiconductor channel.