公开(公告)号：US20240064992A1

公开(公告)日：2024-02-22

申请号：US17821012

申请日：2022-08-19

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Rahul SHARANGPANI ,  Kartik SONDHI ,  Raghuveer S. MAKALA ,  Tiffany SANTOS ,  Fei ZHOU ,  Joyeeta NAG ,  Bhagwati PRASAD

IPC: H01L27/11597 ,  H01L27/11587 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/11597 ,  H01L27/11587 ,  H01L29/6684 ,  H01L29/78391

Abstract: A semiconductor memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical stack of discrete ferroelectric material portions and a vertical semiconductor channel. In one embodiment, the discrete ferroelectric material portions include a ferroelectric alloy material of a first dielectric metal oxide material and a second dielectric metal oxide material. In another embodiment, each of the discrete ferroelectric material portions is oxygen-deficient.

公开(公告)号：US20240064991A1

公开(公告)日：2024-02-22

申请号：US17820997

申请日：2022-08-19

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Kartik SONDHI ,  Rahul SHARANGPANI ,  Raghuveer S. MAKALA ,  Tiffany SANTOS ,  Fei ZHOU ,  Joyeeta NAG ,  Bhagwati PRASAD ,  Adarsh RAJASHEKHAR

IPC: H01L27/11597 ,  H01L27/1159

CPC classification number: H01L27/11597 ,  H01L27/1159

Abstract: A semiconductor memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical stack of discrete ferroelectric material portions and a vertical semiconductor channel. In one embodiment, the discrete ferroelectric material portions include a ferroelectric alloy material of a first dielectric metal oxide material and a second dielectric metal oxide material. In another embodiment, each of the discrete ferroelectric material portions is oxygen-deficient.