公开(公告)号：US11538708B2

公开(公告)日：2022-12-27

申请号：US16867818

申请日：2020-05-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shoichi Murakami ,  Shigeru Nakatsuka ,  Syo Fukata ,  Yusuke Osawa ,  Shigehiro Fujino ,  Masaaki Higashitani

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

公开(公告)号：US11935784B2

公开(公告)日：2024-03-19

申请号：US17345315

申请日：2021-06-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fumitaka Amano ,  Yusuke Osawa ,  Kensuke Ishikawa ,  Mitsuteru Mushiga ,  Motoki Kawasaki ,  Shinsuke Yada ,  Masato Miyamoto ,  Syo Fukata ,  Takashi Kashimura ,  Shigehiro Fujino

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/535 ,  H01L25/065 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/76897 ,  H01L23/535 ,  H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A vertical layer stack including a bit-line-level dielectric layer and an etch stop dielectric layer can be formed over an array region. Bit-line trenches are formed through the vertical layer stack. Bit-line-trench fill structures are formed in the bit-line trenches. Each of the bit-line-trench fill structures includes a stack of a bit line and a capping dielectric strip. At least one via-level dielectric layer can be formed over the vertical layer stack. A bit-line-contact via cavity can be formed through the at least one via-level dielectric layer and one of the capping dielectric strips. A bit-line-contact via structure formed in the bit-line-contact via cavity includes a stepped bottom surface including a top surface of one of the bit lines, a sidewall segment of the etch stop dielectric layer, and a segment of a top surface of the etch stop dielectric layer.

公开(公告)号：US11598005B2

公开(公告)日：2023-03-07

申请号：US16868787

申请日：2020-05-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shoichi Murakami ,  Shigeru Nakatsuka ,  Syo Fukata ,  Yusuke Osawa ,  Shigehiro Fujino ,  Masaaki Higashitani

IPC: H01L21/683 ,  C23C16/458 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  H01L21/033 ,  C23C16/50 ,  C23C16/455

Abstract: A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.

公开(公告)号：US11551961B2

公开(公告)日：2023-01-10

申请号：US16867845

申请日：2020-05-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shoichi Murakami ,  Shigeru Nakatsuka ,  Syo Fukata ,  Yusuke Osawa ,  Shigehiro Fujino ,  Masaaki Higashitani

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/66 ,  C23C16/509

Abstract: An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.