公开(公告)号：US11881417B2

公开(公告)日：2024-01-23

申请号：US16473077

申请日：2017-11-28

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Shuichi Yasuda ,  Kenji Kobayashi

IPC: H01L21/67 ,  B01F23/40 ,  B01F23/45 ,  B01F23/454 ,  B08B3/00 ,  B01F35/83 ,  B01F35/221

CPC classification number: H01L21/67023 ,  B01F23/40 ,  B01F23/45 ,  B01F23/454 ,  B01F23/49 ,  B08B3/00 ,  H01L21/6708 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67253 ,  B01F35/2211 ,  B01F35/833 ,  Y10T137/0396

Abstract: First and second concentration measurements are provided in lines for first and second supply liquid lines. A dissolved concentration of gas in the second supply liquid is lower than that in the first supply liquid. In the first and second lines, first ends of branch lines are connected upstream of the concentration measurements. The second ends of the branch lines are connected to a mixing part. By mixing the first and second supply liquids, a processing liquid is generated. Respective flow rates in the branch lines are based on the first and second concentration measurements to set the dissolved concentration of the gas in the processing liquid. Thus, particles or the like can be removed from the processing liquid to be supplied to a substrate, and the dissolved concentration of the gas in the processing liquid can be set with high accuracy.

公开(公告)号：US11810795B2

公开(公告)日：2023-11-07

申请号：US17182530

申请日：2021-02-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Jun Sawashima ,  Takahiro Yamaguchi ,  Kenji Kobayashi

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67023 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/68707

Abstract: Disclosed is a substrate treating apparatus. All treating units are each arranged such that a treatment chamber, a chemical piping space, and an exhaust chamber are located side by side along a transportation space, the chemical piping space is located on a first side of the treatment chamber, and the exhaust chamber faces the chemical piping space across the treatment chamber when seen from the transportation space. The exhaust chamber faces the chemical piping space across the treatment chamber, leading to prevention of obstruction of a passage for passing a pipe, configured to supply a chemical to a substrate held by a holding rotator, by an exhaust pipe. Moreover, a single type of treating units is enough for the substrate treating apparatus instead of two types of treating units currently used. This results in sharing of components by all the treating units.

公开(公告)号：US11610790B2

公开(公告)日：2023-03-21

申请号：US17245079

申请日：2021-04-30

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji Kobayashi ,  Jun Sawashima ,  Yuta Nishimura ,  Akito Hatano ,  Motoyuki Shimai ,  Toyohide Hayashi

IPC: H01L21/67

Abstract: A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.

公开(公告)号：US11217441B2

公开(公告)日：2022-01-04

申请号：US16555307

申请日：2019-08-29

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji Kobayashi ,  Manabu Okutani

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/306 ,  H01L21/324 ,  H01L21/673 ,  B08B3/02

Abstract: A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.

公开(公告)号：US10964526B2

公开(公告)日：2021-03-30

申请号：US16273400

申请日：2019-02-12

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu Okutani ,  Kenji Kobayashi ,  Naohiko Yoshihara

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes forming a liquid film of a processing liquid covering an entire upper surface of a horizontally-held substrate; heating the substrate to make the processing liquid of the substrate evaporate to form a gas phase layer between the upper surface of the substrate and the processing liquid and maintain the liquid film on the gas phase layer; blowing a gas at a first flow rate onto the liquid film on the substrate to partially remove the processing liquid to open a hole in the liquid film; heating the substrate to spread the hole to an outer periphery of the substrate and move the liquid film on the gas phase layer to remove the processing liquid, constituting the liquid film, off the substrate; and blowing a gas at a second flow rate greater than the first flow rate onto a region of the upper surface of the substrate within the hole after the hole opening step to spread the hole to the outer periphery of the substrate and move the liquid film on the gas phase layer to remove the processing liquid, constituting the liquid film, off the substrate.

公开(公告)号：US10825713B2

公开(公告)日：2020-11-03

申请号：US15642928

申请日：2017-07-06

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Naohiko Yoshihara ,  Kenji Kobayashi ,  Manabu Okutani

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  B05C11/08

Abstract: A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

公开(公告)号：US10332761B2

公开(公告)日：2019-06-25

申请号：US15019246

申请日：2016-02-09

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji Kobayashi ,  Jun Sawashima ,  Yuta Nishimura ,  Akito Hatano ,  Motoyuki Shimai ,  Toyohide Hayashi

IPC: H01L21/67

Abstract: A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.

公开(公告)号：US10249487B2

公开(公告)日：2019-04-02

申请号：US15004361

申请日：2016-01-22

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu Okutani ,  Kenji Kobayashi ,  Naohiko Yoshihara

IPC: B08B7/04 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal orientation by means of a substrate holding unit, a liquid film forming step of supplying a processing liquid to an upper surface of the substrate held by the substrate holding unit to form a liquid film, an upper surface covering step of discharging, above the substrate held by the substrate holding unit, an inert gas radially and parallel to the upper surface of the substrate from a center toward a peripheral edge of the substrate to form an inert gas stream flowing parallel to the upper surface of the substrate and covering the upper surface of the substrate, and a liquid film removing step of discharging an inert gas toward the upper surface of the substrate to remove the liquid film, formed by the liquid film forming step, from the upper surface of the substrate.

公开(公告)号：US12211708B2

公开(公告)日：2025-01-28

申请号：US18523474

申请日：2023-11-29

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Shuichi Yasuda ,  Kenji Kobayashi

IPC: H01L21/02 ,  B01F23/40 ,  B01F23/45 ,  B01F23/454 ,  B08B3/00 ,  H01L21/67 ,  B01F35/221 ,  B01F35/83

Abstract: First and second concentration measurement parts (415, 425) are provided in first and second supply liquid lines (412, 422) in which first and second supply liquids flow, respectively. A dissolved concentration of gas in the second supply liquid is lower than that in the first supply liquid. In the first and second supply liquid lines, respective one ends of first and second branch lines (51, 52) are connected to respective positions on the upstream side of the concentration measurement parts. The other ends of the first and second branch lines are connected to a mixing part (57), and by mixing the first and second supply liquids, a processing liquid is generated. Respective flow rate adjustment parts (58) of the first and second branch lines are controlled on the basis of respective measured values of the first and second concentration measurement parts so that the dissolved concentration of the gas in the processing liquid can become a set value. It is thereby possible to prevent the supply liquid containing particles or the like caused by the concentration measurement part from being contained into the processing liquid to be supplied to a substrate and also to adjust the dissolved concentration of the gas in the processing liquid to the set value with high accuracy.

公开(公告)号：US11670517B2

公开(公告)日：2023-06-06

申请号：US17262807

申请日：2019-07-04

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Sei Negoro ,  Kenji Kobayashi

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/32134 ,  H01L21/02052 ,  H01L21/32055 ,  H01L21/67023 ,  H01L21/68764

Abstract: An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.