METHODS OF FORMING FILMS
    1.
    发明申请
    METHODS OF FORMING FILMS 审中-公开
    形成薄膜的方法

    公开(公告)号:US20150064365A1

    公开(公告)日:2015-03-05

    申请号:US14013320

    申请日:2013-08-29

    CPC classification number: C23C14/48 C23C14/06 C23C16/26 C23C16/30 C23C16/513

    Abstract: A method of forming a layer, the method including providing a feedstock, the feedstock including a first component and a second component; ionizing at least part of the feedstock thereby forming a plasma, wherein the plasma includes constituents selected from: the first component, derivatives of the first component, ions of the first component, ions of derivatives of the first component, the second component, derivatives of the second component, ions of the second component, ions of derivatives of the second component, or combinations thereof, and wherein the individual identities, individual ratios, total quantities, or any combination thereof of the first and second component in the feedstock can modulate the makeup of the plasma; forming a beam from the plasma; and forming a layer from the beam, wherein the layer includes at least some portion of at least the first or the second component.

    Abstract translation: 一种形成层的方法,所述方法包括提供原料,所述原料包括第一组分和第二组分; 电离原料的至少一部分,从而形成等离子体,其中所述等离子体包括选自以下的成分:第一组分,第一组分的衍生物,第一组分的离子,第一组分的衍生物的离子,第二组分, 第二组分的离子,第二组分的离子,第二组分的衍生物的离子或其组合,并且其中原料中第一组分和第二组分的个体同一性,个体比例,总量或其任何组合可以调节 化妆等离子体; 从等离子体形成光束; 以及从所述梁形成层,其中所述层包括至少第一或第二组分的至少一部分。

    METHODS OF FORMING LAYERS
    2.
    发明申请

    公开(公告)号:US20130202809A1

    公开(公告)日:2013-08-08

    申请号:US13756672

    申请日:2013-02-01

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.

    Methods of forming layers
    3.
    发明授权
    Methods of forming layers 有权
    形成层的方法

    公开(公告)号:US09275833B2

    公开(公告)日:2016-03-01

    申请号:US13756669

    申请日:2013-02-01

    CPC classification number: H01J37/3174 C23C14/48 H01J37/3171 H01L21/02115

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from ±2 to ±6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 Å into the surface of the substrate to form a layer on the substrate.

    Abstract translation: 一种形成层的方法,所述方法包括提供具有适于在其上沉积的至少一个表面的基底; 并且将粒子束引导到衬底的表面,包括中等电荷的离子(MCI)的粒子束,基本上所有的MCI独立地具有±2至±6的电荷和不大于约200eV的动能,其中MCI 不要将大于约30埃的渗透到基底的表面上,以在基底上形成一层。

    METHODS OF FORMING LAYERS
    4.
    发明申请
    METHODS OF FORMING LAYERS 有权
    形成层的方法

    公开(公告)号:US20130200280A1

    公开(公告)日:2013-08-08

    申请号:US13756669

    申请日:2013-02-01

    CPC classification number: H01J37/3174 C23C14/48 H01J37/3171 H01L21/02115

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from ±2 to ±6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 Å into the surface of the substrate to form a layer on the substrate.

    Abstract translation: 一种形成层的方法,所述方法包括提供具有适于在其上沉积的至少一个表面的基底; 并且将粒子束引导到衬底的表面,包括中等电荷的离子(MCI)的粒子束,基本上所有的MCI独立地具有±2至±6的电荷和不大于约200eV的动能,其中MCI 不要将大于约30埃的渗透到基底的表面上,以在基底上形成一层。

    METHODS OF FORMING FILMS
    5.
    发明申请

    公开(公告)号:US20180245213A1

    公开(公告)日:2018-08-30

    申请号:US15964747

    申请日:2018-04-27

    CPC classification number: C23C14/48 C23C14/06 C23C16/26 C23C16/30 C23C16/513

    Abstract: A method of forming a layer, the method including providing a feedstock, the feedstock including a first component and a second component; ionizing at least part of the feedstock thereby forming a plasma, wherein the plasma includes constituents selected from: the first component, derivatives of the first component, ions of the first component, ions of derivatives of the first component, the second component, derivatives of the second component, ions of the second component, ions of derivatives of the second component, or combinations thereof, and wherein the individual identities, individual ratios, total quantities, or any combination thereof of the first and second component in the feedstock can modulate the makeup of the plasma; forming a beam from the plasma; and forming a layer from the beam, wherein the layer includes at least some portion of at least the first or the second component.

    METHODS OF FORMING LAYERS
    6.
    发明申请

    公开(公告)号:US20160208378A1

    公开(公告)日:2016-07-21

    申请号:US14944795

    申请日:2015-11-18

    CPC classification number: C23C14/48 H01J27/024 H01J49/06

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for forming a layer thereon; directing a particle beam towards the surface of the substrate, the particle beam including particles, wherein the particle beam has an angle of incidence with respect to the substrate, and is configured so that the particles have implant energies that are not greater than about 100 eV; changing the angle of incidence of the particle beam, the implant energy of the particles, or a combination thereof; and directing the particle beam towards the surface of the substrate a subsequent time, wherein the particles of the particle beam form a layer on the substrate.

    METHODS OF FORMING LAYERS
    7.
    发明申请

    公开(公告)号:US20160138154A1

    公开(公告)日:2016-05-19

    申请号:US14953685

    申请日:2015-11-30

    CPC classification number: C23C14/48 H01J27/024 H01J49/06

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including small molecule molecular species, wherein the small molecule molecular species break apart upon interaction with atoms at the substrate into atomic components, each of the atomic components having implant energies from about 20 eV to about 100 eV to form a layer.

    METHODS OF FORMING LAYERS
    8.
    发明申请
    METHODS OF FORMING LAYERS 审中-公开
    形成层的方法

    公开(公告)号:US20150348753A1

    公开(公告)日:2015-12-03

    申请号:US14822452

    申请日:2015-08-10

    Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.

    Abstract translation: 一种形成层的方法,所述方法包括提供具有适于在其上沉积的至少一个表面的基底; 提供前体离子束,前体离子束包括离子; 中和所述前体离子束的离子的至少一部分以形成中性粒子束,所述中性粒子束包括中性粒子; 并且将中性粒子束引导到衬底的表面,其中离子和中性粒子都具有不大于100eV的注入能量,并且粒子束的中性粒子在衬底上形成一层。

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