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    PHOTOELECTRIC CONVERSION APPARATUS AND ELECTRONIC DEVICE
    1.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS AND ELECTRONIC DEVICE 有权
    光电转换装置和电子装置

    公开(公告)号：US20150270429A1

    公开(公告)日：2015-09-24

    申请号：US14631386

    申请日：2015-02-25

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Hiroaki JIROKU

    IPC: H01L31/105

    CPC classification number: H01L31/105 ,  G06K9/00013 ,  G06K2009/0006 ,  G06K2009/00932 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14692

    Abstract: A photoelectric conversion apparatus includes a substrate 13 and a photodiode 9 in which a first semiconductor layer 25, a second semiconductor layer 26 and a third semiconductor layer 27 are laminated on the substrate 13 in the stated order. The second semiconductor layer 26 is an i-type semiconductor layer, and one of the first semiconductor layer 25 and the third semiconductor layer 27 is an n-type semiconductor layer, and the other is a p-type semiconductor layer. Also, the first semiconductor layer 25 is covered by the second semiconductor layer 26.

    Abstract translation: 光电转换装置包括基板13和光电二极管9，其中第一半导体层25，第二半导体层26和第三半导体层27按照所述顺序层叠在基板13上。 第二半导体层26是i型半导体层，第一半导体层25和第三半导体层27中的一个是n型半导体层，另一个是p型半导体层。 此外，第一半导体层25被第二半导体层26覆盖。

    Light Emitting Device And Projector
    2.
    发明申请
    Light Emitting Device And Projector 有权

    公开(公告)号：US20220140568A1

    公开(公告)日：2022-05-05

    申请号：US17513987

    申请日：2021-10-29

    Applicant: Seiko Epson Corporation

    Inventor： Hiroaki JIROKU

    IPC: H01S5/042 ,  G03B21/20 ,  H01S5/323

    Abstract: A light emitting device according to the present disclosure includes a substrate, and a columnar structure group formed of a plurality of columnar structures, wherein the plurality of columnar structures includes a plurality of first columnar structures disposed in a light emitting section, and a plurality of second columnar structures disposed in a region other than the light emitting section, the columnar structure group includes a first columnar structure group including the plurality of first columnar structures and a light propagation layer, and a second columnar structure group including the plurality of second columnar structures and an insulating layer, an inter-layer insulating layer configured to cover the columnar structure groups is disposed on the substrate, a conductive layer to be electrically coupled to the first columnar structure group is disposed on the inter-layer insulating layer, a first electrode terminal electrically coupled to the conductive layer is disposed on the inter-layer insulating layer, the first columnar structures are constituted by a first semiconductor layer, a second semiconductor layer, and a light emitting layer, the conductive layer is electrically coupled to the second semiconductor layer, and when viewed from a normal direction of the substrate, the conductive layer and the first electrode terminal overlap the second columnar structure group.

    LIGHT-EMITTING DEVICE, PROJECTOR, AND DISPLAY
    4.
    发明申请
    LIGHT-EMITTING DEVICE, PROJECTOR, AND DISPLAY 有权

    公开(公告)号：US20230090522A1

    公开(公告)日：2023-03-23

    申请号：US17943181

    申请日：2022-09-12

    Applicant: SEIKO EPSON CORPORATION ,  SOPHIA SCHOOL CORPORATION

    Inventor： Hiroaki JIROKU ,  Takafumi NODA ,  Katsumi KISHINO

    IPC: H01S5/042

    Abstract: A light-emitting device includes: a substrate; first column portions provided at the substrate; a plurality of second column portions provided at the substrate and that surround the first column portions as viewed from a normal direction of the substrate; a first semiconductor layer coupled to the first column portions; an insulating layer covering the first semiconductor layer and the second column portions; and a wiring line electrically coupled to the first semiconductor layer. Each of the first column portions and each of the second column portions includes an n-type second semiconductor layer, a p-type third semiconductor layer, and a u-type fourth semiconductor layer. The fourth semiconductor layer at each of the first column portions is injected with current to emit light. The fourth semiconductor layer at each of the second column portions is not injected with current. The wiring line overlaps at least one of the second column portions.

    Light Emitting Device And Projector
    5.
    发明申请
    Light Emitting Device And Projector 有权

    公开(公告)号：US20210296529A1

    公开(公告)日：2021-09-23

    申请号：US17202521

    申请日：2021-03-16

    Applicant: Seiko Epson Corporation

    Inventor： Hiroaki JIROKU ,  Yoshitomo KUMAI

    IPC: H01L33/20 ,  H01L33/32 ,  G03B21/20

    Abstract: The light emitting device includes a laminated structure having a plurality of columnar parts, wherein the laminated structure includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer, the first semiconductor layer and the light emitting layer constitute the columnar part, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the second semiconductor layer has a plurality of recessed parts, and a surface of the second semiconductor layer which defines the recessed part and a surface of the third semiconductor layer closer to the second semiconductor layer constitute an gap.

    Light Emitting Device, Projector, And Display
    7.
    发明申请
    Light Emitting Device, Projector, And Display 有权

    公开(公告)号：US20210126434A1

    公开(公告)日：2021-04-29

    申请号：US17082475

    申请日：2020-10-28

    Applicant: Seiko Epson Corporation ,  Sophia School Corporation

    Inventor： Hiroaki JIROKU ,  Katsumi KISHINO

    IPC: H01S5/34 ,  H01S5/042

    Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.

    MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION APPARATUS
    8.
    发明申请
    MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION APPARATUS 审中-公开
    光电转换装置的制造方法

    公开(公告)号：US20160233268A1

    公开(公告)日：2016-08-11

    申请号：US15131780

    申请日：2016-04-18

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Hiroaki JIROKU

    IPC: H01L27/146

    CPC classification number: H01L27/14696 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/022408 ,  H01L31/0322 ,  H01L31/18 ,  H04N3/155 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A method of manufacturing a photoelectric conversion apparatus includes forming a switching element on one surface of a substrate, forming an interlayer insulation film so as to cover the switching element, forming a shading film on the interlayer insulation film in an area overlapping the switching element when seen from a film thickness direction of the substrate, forming a lower electrode on the interlayer insulation film, and forming a semiconductor film having a chalcopyrite structure on the lower electrode. A group 16 element is included in the semiconductor film, and in forming the semiconductor film, the shading film and the lower electrode are caused to react to the group 16 element to form a shading film including the group 16 element and a lower electrode including the group 16 element.

    Abstract translation: 一种制造光电转换装置的方法，包括在基板的一个表面上形成开关元件，形成层间绝缘膜以覆盖开关元件，在与开关元件重叠的区域中的层间绝缘膜上形成遮光膜， 从基板的膜厚方向观察，在层间绝缘膜上形成下电极，在下电极上形成具有黄铜矿结构的半导体膜。 在半导体膜中包含16族元素，在形成半导体膜时，使遮光膜和下电极与第16族元素反应，形成包含第16族元素和下电极的遮光膜， 第16组元素。

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