Abstract:
A piezoelectric element includes a piezoelectric layer formed as a stacked structure of first, second, and third piezoelectric films. The first piezoelectric film is formed on a first electrode. The second piezoelectric film is formed on the first piezoelectric film. The third piezoelectric film is formed on the second piezoelectric film. Each of the first, second, and third piezoelectric films includes potassium, sodium, and niobium. A second electrode is formed on the piezoelectric layer. A concentration of sodium in the first piezoelectric film is greater than a concentration of sodium in the second piezoelectric film. The concentration of sodium in the second piezoelectric film is greater than a concentration of sodium in the third piezoelectric film.
Abstract:
A piezoelectric element includes a substrate, a first electrode formed on the substrate, a piezoelectric layer, which is a layered structure of a plurality of piezoelectric films each containing potassium, sodium, and niobium, formed on the first electrode, and a second electrode formed on the piezoelectric layer. A sodium concentration in the piezoelectric layer has a Na local maximum value, which is a local maximum value of the sodium concentration, in a first piezoelectric film, which is among the plurality of piezoelectric films, in the vicinity of the first electrode, a sodium concentration gradient decreasing from the Na local maximum value toward the second electrode, and a Na local minimum value, which is a local minimum value of the sodium concentration, near a boundary between the first piezoelectric film and a second piezoelectric film formed immediately above the first piezoelectric film.
Abstract:
A piezoelectric element includes: a first electrode and a second electrode; and a piezoelectric layer provided between the first electrode and the second electrode, where: the piezoelectric layer contains a complex oxide having a perovskite structure and including potassium, sodium, and niobium; on a cross-section of the piezoelectric layer, a standard deviation of values that are obtained by normalizing sodium atom concentrations in eight regions by an average value of the sodium atom concentrations in the eight regions is 0.140 or less; each of the regions includes a central line of the piezoelectric layer; each of the regions is a square having a size in a thickness direction of the piezoelectric layer and a size in a direction orthogonal to the thickness direction of 150 nm; and the eight regions are aligned in the direction orthogonal to the thickness direction.
Abstract:
Provided is a method of manufacturing a liquid ejecting head including a pressure generating chamber communicating with a nozzle opening and a piezoelectric element including a piezoelectric layer and an electrode, the method including: forming a first piezoelectric precursor film containing Bi and Fe, or Ba and Ti; forming a first piezoelectric layer by heating and crystallizing the first piezoelectric precursor film; forming a second piezoelectric precursor film further containing at least one selected from Li, B, and Cu on the first piezoelectric layer, in addition to Bi and Fe, or Ba and Ti contained in the first piezoelectric precursor film; and forming the piezoelectric layer by heating and crystallizing the first piezoelectric layer and the second piezoelectric precursor film.
Abstract:
A piezoelectric element in which a first electrode, a piezoelectric layer, and a second electrode are stacked on a substrate is provided. The piezoelectric element is a piezoelectric element in which the first electrode, the piezoelectric layer, and the second electrode are stacked in order on the substrate and includes an orientation control layer that is provided between the piezoelectric layer and the first electrode and that controls orientation of the piezoelectric layer and a titanium layer that is provided between the first electrode and the orientation control layer and that contains at least Ti.
Abstract:
A piezoelectric element includes a first electrode; a piezoelectric layer, placed on or above the first electrode, containing potassium, sodium, niobium, titanium, and oxygen; and a second electrode placed on or above the piezoelectric layer.
Abstract:
A piezoelectric element includes a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is provided between the first electrode and the second electrode, and is formed of a perovskite type oxide which contains potassium, sodium, niobium, and manganese. In the piezoelectric layer, a proportion of an A-site constituent element of the perovskite type oxide is smaller than a proportion of a B-site constituent element thereof. In XRD measurement of the piezoelectric layer, two or more peaks derived from the perovskite type oxide are provided in a range of 44°
Abstract:
A piezoelectric element includes a first electrode, a piezoelectric layer formed of a first piezoelectric film which is formed on the first electrode and which includes potassium, sodium, and niobium and a plurality of second piezoelectric films which are formed on the first piezoelectric film and which include potassium, sodium, and niobium, and a second electrode formed on the piezoelectric layer, in which the piezoelectric layer is a stack of a plurality of piezoelectric films, the first piezoelectric film has a thickness of 30 nm to 70 nm, a concentration of sodium in each of the piezoelectric films is along a gradient in the film thickness direction with the first electrode side being high and the second electrode side being low.
Abstract:
There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn2+), trivalent manganese (Mn3+), and tetravalent manganese (Mn4+). A molar ratio (Mn2+/Mn3++Mn4+) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.
Abstract:
A piezoelectric material contains a first component that is a rhombohedral crystal that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1, a second component that is a crystal other than a rhombohedral crystal that is configured to have a complex oxide with the perovskite structure and Curie temperature Tc2, and a third component that is configured to have a complex oxide with the perovskite structure in which the component is formed as the same crystal system as the second component and Curie temperature Tc3, in which Tc1 is higher than Tc2, and Tc3 is equal to or higher than Tc1.