公开(公告)号：US20230288811A1

公开(公告)日：2023-09-14

申请号：US18310704

申请日：2023-05-02

Applicant: SEMES CO, LTD.

Inventor： Moon Hyung BAE ,  Hye Bin BAEK ,  Youngseo AN ,  Euntark LEE ,  Min Jung PARK ,  Seunghan LEE ,  Jung-Hyun LEE

IPC: G03F7/16 ,  H01L21/687 ,  H01L21/67

CPC classification number: G03F7/167 ,  H01L21/68742 ,  H01L21/67017 ,  H01L21/67103

Abstract: The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.

公开(公告)号：US20230051256A1

公开(公告)日：2023-02-16

申请号：US17885865

申请日：2022-08-11

Applicant: SEMES CO., LTD.

Inventor： Sung-Gyu LEE ,  Jung-Hyun LEE ,  Hye Bin BAEK ,  Dae Woon LEE ,  Dongwoon PARK

IPC: G03F7/16

Abstract: Disclosed is an apparatus for treating a substrate, which includes: a first unit configured to perform a coating process of forming a film on a substrate; a transfer unit including a transfer robot transferring a substrate for which the coating process is terminated; and a controller controlling the first unit and the transfer unit, in which the controller controls the substrate for which the coating process is terminated in the first unit to rotate at a first rotational velocity until the substrate is transferred by the transfer unit.

公开(公告)号：US20210132499A1

公开(公告)日：2021-05-06

申请号：US17084903

申请日：2020-10-30

Applicant: SEMES CO., LTD.

Inventor： Moon Hyung BAE ,  Hye Bin BAEK ,  Youngseo AN ,  Euntark LEE ,  Min Jung PARK ,  Seunghan LEE ,  Jung-Hyun LEE

IPC: G03F7/16 ,  H01L21/687

Abstract: The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.

公开(公告)号：US20240198393A1

公开(公告)日：2024-06-20

申请号：US18510663

申请日：2023-11-16

Applicant: SEMES CO., LTD.

Inventor： Yong Chul KWAK ,  Jung Hyun LEE ,  Jae Ho YOO ,  Kyo Sang YOON ,  Hye Bin BAEK

IPC: B08B3/08 ,  B08B3/02 ,  B08B5/04 ,  G03F7/00

CPC classification number: B08B3/08 ,  B08B3/02 ,  B08B5/04 ,  G03F7/70925

Abstract: A substrate treating apparatus and a cleaning method thereof that can clean a nozzle tip and its surroundings in the presence of a source of contamination are provided. The substrate treating apparatus includes: a substrate support unit supporting a substrate; a spraying unit including a nozzle tip member, which has an outlet formed at an end thereof, and ejecting a treating solution onto the substrate using the nozzle tip member; and a standby port accommodating the nozzle tip member that has completed the ejection of the treating solution, wherein the substrate treating apparatus cleans the nozzle tip member and the inside of the standby port before the nozzle tip member sucks back a second chemical solution.