公开(公告)号：US20240177975A1

公开(公告)日：2024-05-30

申请号：US18372954

申请日：2023-09-26

Applicant: SEMES CO., LTD.

Inventor： Yong Jun BAE ,  Seung Pyo LEE ,  Dong Jun PARK ,  Chang Eon PARK ,  Su Won KIM ,  Dho Young KIM

IPC: H01J37/32 ,  F28F3/12

CPC classification number: H01J37/32522 ,  F28F3/12 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32513 ,  H01J2237/002

Abstract: A cooling plate and a plasma processing chamber are proposed. The cooling plate is configured to allow air to flow throughout the entire region of a window while reducing a region of covering the window. The cooling plate is configured to cool a window configured to seal a plasma processing space at an upper portion, and the cooling plate includes a body having a circular plate shape covering a part of a center region of the window, an inlet through which a gas is introduced into the body, and an outlet through which the gas is discharged from the body to the window. A flow path through which the gas flows and a slope formed from the flow path toward the window are formed between the inlet and the outlet.

公开(公告)号：US20140090783A1

公开(公告)日：2014-04-03

申请号：US14039558

申请日：2013-09-27

Applicant: SEMES CO., LTD.

Inventor： Hyung Joon KIM ,  Seung Pyo LEE

IPC: H01J37/32

Abstract: The present invention disclosed herein relates to a substrate treating apparatus, and more particularly, to an apparatus for treating a substrate using plasma. Embodiments of the present invention provide substrate treating apparatuses including a chamber having a treating space defined therein, a support member disposed in the chamber to support a substrate, a gas supply unit supplying a gas into the chamber, a plasma source generating plasma from the gas supplied into the chamber, a baffle disposed to surround the support member in the chamber and having through holes to exhaust a gas in the treating space, and a shielding unit preventing an electromagnetic field from an inside of the chamber to an outside of the chamber.

Abstract translation: 本文公开的本发明涉及一种基板处理装置，更具体地涉及一种使用等离子体处理基板的装置。 本发明的实施例提供了一种基板处理装置，包括具有限定在其中的处理空间的室，设置在室内以支撑基板的支撑构件，向腔室供应气体的气体供给单元，从气体产生等离子体的等离子体源 供应到所述腔室中的挡板，所述挡板设置成围绕所述腔室中的所述支撑构件并具有用于排出所述处理空间中的气体的通孔，以及防止来自所述腔室的内部的电磁场到所述腔室的外部的屏蔽单元。

公开(公告)号：US20140034240A1

公开(公告)日：2014-02-06

申请号：US13953009

申请日：2013-07-29

Applicant: Semes Co., Ltd.

Inventor： Hyung Joon KIM ,  Seung Pyo LEE ,  Hyung Je WOO

IPC: H01L21/02

CPC classification number: H01L21/02 ,  C23C16/4412 ,  H01J37/32633 ,  H01J37/32834

Abstract: Provided is a substrate treatment apparatus using plasma. The substrate treatment apparatus includes a housing having an inner space in which a substrate is treated, a support member disposed within the housing to support the substrate, a gas supply unit supplying a gas into the housing, a plasma source generating plasma from the gas supplied into the housing, and a baffle unit disposed to surround the support member within the housing, the baffle unit including a baffle in which through holes for exhausting the gas into the inner space of the housing are defined. The baffle is divided into a plurality of areas when viewed from an upper side, and each of portions of the plurality of areas is formed of a metallic material, and each of the other portions of the plurality of areas is formed of a nonmetallic material.

Abstract translation: 提供了使用等离子体的基板处理装置。 基板处理装置包括：具有内部空间的壳体，其中处理基板;支撑构件，其设置在壳体内以支撑基板;气体供应单元，将气体供应到壳体中;等离子体源，从提供的气体产生等离子体 以及设置成围绕壳体内的支撑构件设置的挡板单元，挡板单元包括挡板，其中限定用于将气体排出到壳体的内部空间中的通孔。 当从上侧观察时，挡板被分成多个区域，并且多个区域的每个部分由金属材料形成，并且多个区域中的每个区域由非金属材料形成。