公开(公告)号：US20250065360A1

公开(公告)日：2025-02-27

申请号：US18768956

申请日：2024-07-10

Applicant: SEMES CO., LTD. ,  Samsung Electronics Co., Ltd.

Inventor： Jin Yeong Sung ,  Ki Hoon Choi ,  Seung Un Oh ,  Young Ho Park ,  Sang Hyeon Ryu ,  Jang Jin Lee ,  Hyun Yoon ,  Sang Gun Lee ,  Yu Jin Cho ,  Ho Jong Hwang ,  Jong Ju Park ,  Jong Keun Oh ,  Yong Woo Kim

IPC: B05C13/00 ,  G05B19/401 ,  G05B19/404 ,  G06T7/73

Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

公开(公告)号：US20220283489A1

公开(公告)日：2022-09-08

申请号：US17501085

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： SANG UK PARK ,  Jong Ju Park ,  Jong Keun Oh

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/38

Abstract: A reflective photomask includes a pattern area, a non-pattern area at least partially surrounding the pattern area, and a black border area interposed between the pattern area and the non-pattern area. The reflective photomask includes a mask substrate, a reflector layer stacked on the mask substrate, and an absorber layer stacked on the reflector layer. The black border area includes a plurality of first anneal patterns which are arranged along an edge of the pattern area and each have an island shape, and a second anneal pattern which fills inside of the black border area and has a line shape.

公开(公告)号：US11829063B2

公开(公告)日：2023-11-28

申请号：US17501085

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Uk Park ,  Jong Ju Park ,  Jong Keun Oh

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective photomask includes a pattern area, a non-pattern area at least partially surrounding the pattern area, and a black border area interposed between the pattern area and the non-pattern area. The reflective photomask includes a mask substrate, a reflector layer stacked on the mask substrate, and an absorber layer stacked on the reflector layer. The black border area includes a plurality of first anneal patterns which are arranged along an edge of the pattern area and each have an island shape, and a second anneal pattern which fills inside of the black border area and has a line shape.

公开(公告)号：US09223199B2

公开(公告)日：2015-12-29

申请号：US14059533

申请日：2013-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Keun Oh ,  Hyungho Ko ,  Inkyun Shin ,  Jaehyuck Choi ,  JunYoul Choi

IPC: G03F1/50 ,  G03F1/48 ,  G03F1/68 ,  G03F1/80 ,  G03F1/54

CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/48 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.

Abstract translation: 光掩模及其形成方法，所述光掩模包括透明基板; 透明基板上的遮光图案，包括钼和硅的遮光图案; 以及覆盖所述遮光图案的至少一侧壁的蚀刻停止层，其中所述蚀刻停止层的蚀刻速率低于所述遮光图案相对于氨基清洗溶液的蚀刻速率。

公开(公告)号：US09766540B2

公开(公告)日：2017-09-19

申请号：US14977767

申请日：2015-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Keun Oh ,  Hyungho Ko ,  Inkyun Shin ,  Jaehyuck Choi ,  JunYoul Choi

IPC: G03F1/76 ,  G03F1/48 ,  G03F1/68 ,  G03F1/80 ,  G03F1/38 ,  G03F1/54

CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/48 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.