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    REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
    4.
    发明申请
    REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20210391422A1

    公开(公告)日：2021-12-16

    申请号：US17446238

    申请日：2021-08-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Shengling DENG ,  Dean E. PROBST ,  Zia HOSSAIN

    IPC: H01L29/06 ,  H01L29/78 ,  H01L29/739 ,  H01L29/868 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10

    Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.

    TRENCH MOSFET CONTACTS
    5.
    发明申请
    TRENCH MOSFET CONTACTS 审中-公开

    公开(公告)号：US20200083366A1

    公开(公告)日：2020-03-12

    申请号：US16128139

    申请日：2018-09-11

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Prasad VENKATRAMAN ,  Dean E. PROBST

    IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66

    Abstract: A device has an active area made of an array of first type of device cells and a gate or shield contact area made of an array of a second type of device cells that are laid out at a wider pitch than the array of first type of device cells. Each device cell in the active area includes a trench that contains a gate electrode and an adjoining mesa that contains the drain, source, body, and channel regions of the device. The second type of device cell includes a trench that is wider than the trench in the first device cell, but a mesa of the second type of device cell has about the same width as the mesa of the first type of device cell. Having about the same width, the mesa in the second type of device cell in the contact area has similar breakdown characteristics as a mesa in the first type of device cell in the active area of the device.

    REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
    6.
    发明申请
    REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20190326392A1

    公开(公告)日：2019-10-24

    申请号：US15959479

    申请日：2018-04-23

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Shengling DENG ,  Dean E. PROBST ,  Zia HOSSAIN

    IPC: H01L29/06 ,  H01L29/78 ,  H01L29/739 ,  H01L29/868 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66

    Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.

    POWER TRANSISTORS WITH RESONANT CLAMPING CIRCUITS
    9.
    发明申请
    POWER TRANSISTORS WITH RESONANT CLAMPING CIRCUITS 有权

    公开(公告)号：US20250096679A1

    公开(公告)日：2025-03-20

    申请号：US18468400

    申请日：2023-09-15

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jaume ROIG-GUITART ,  Dean E. PROBST

    IPC: H02M3/158 ,  H03K17/687

    Abstract: In a general aspect, a circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) having a gate, a source, and a drain. The MOSFET has a first breakdown voltage. The circuit also includes a clamping circuit coupled between the drain and the source. The clamping circuit including a diode having a second breakdown voltage that is less than the first breakdown voltage. A cathode of the diode is coupled with the drain of the MOSFET. The clamping circuit further includes an inductor having a first terminal coupled with an anode of the diode, and a second terminal coupled with the source of the MOSFET.

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