公开(公告)号：US20170077082A1

公开(公告)日：2017-03-16

申请号：US15251910

申请日：2016-08-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： David D. MARREIRO ,  Yupeng CHEN ,  Steven M. ETTER ,  Umesh SHARMA

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/866

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/861 ,  H01L29/866

Abstract: An ultra-low capacitance ESD protection device with an ultra-fast response time and a low turn-on voltage, and a high holding current. The device may include: a heavily-doped p-type substrate; a lightly-doped n-type epitaxial layer with a heavily-doped n-type buried layer; and a semiconductor-controlled rectifier (SCR) structure within the epitaxial layer. The SCR structure includes, between a ground terminal and a pad terminal: a shallow P+ region within a moderately-doped n-type well to form an emitter-base junction of a trigger transistor; a shallow N+ region within a moderately-doped p-type well to form an emitter-base junction of a latching transistor, and a PN junction coupled to either of the shallow regions as a forward-biased series diode. To reduce capacitance, the n-type and p-type wells are separated by a lightly-doped portion of the epitaxial layer having a small lateral dimension for enhanced switching speed.

Abstract translation: 超低电容ESD保护器件具有超快的响应时间和低导通电压以及高保持电流。 该器件可以包括：重掺杂p型衬底; 具有重掺杂n型掩埋层的轻掺杂n型外延层; 和外延层内的半导体可控整流器（SCR）结构。 SCR结构包括在接地端子和焊盘端子之间：在中等掺杂的n型阱内的浅P +区域，以形成触发晶体管的发射极 - 基极结; 在中等掺杂的p型阱内形成浅N +区，以形成锁存晶体管的发射极 - 基极结，以及耦合到任何一个浅区的PN结作为正向偏置串联二极管。 为了减小电容，n型和p型阱由具有小横向尺寸的外延层的轻掺杂部分分开，以提高开关速度。

公开(公告)号：US20240203975A1

公开(公告)日：2024-06-20

申请号：US18588372

申请日：2024-02-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Steven M. ETTER ,  Yupeng CHEN

IPC: H01L27/02 ,  H01L29/866

CPC classification number: H01L27/0248 ,  H01L29/866

Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.

公开(公告)号：US20190067269A1

公开(公告)日：2019-02-28

申请号：US15684556

申请日：2017-08-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yupeng CHEN ,  Steven M. ETTER ,  Umesh SHARMA

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/732 ,  H01L29/861 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L23/535 ,  H01L29/66

CPC classification number: H01L27/0248 ,  H01L23/535 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0664 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66136 ,  H01L29/66234 ,  H01L29/732 ,  H01L29/7322 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/8613

Abstract: In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.

公开(公告)号：US20230253397A1

公开(公告)日：2023-08-10

申请号：US17650451

申请日：2022-02-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Steven M. ETTER ,  Yupeng CHEN

IPC: H01L27/02 ,  H01L29/866

CPC classification number: H01L27/0248 ,  H01L29/866

Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.

公开(公告)号：US20190035886A1

公开(公告)日：2019-01-31

申请号：US16134936

申请日：2018-09-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. GRIVNA ,  Steven M. ETTER ,  Hiroyuki SUZUKI ,  Miki ICHIYANAGI ,  Toshihiro HACHIYANAGI

IPC: H01L29/06 ,  H01L49/02 ,  H01L29/78 ,  H01L29/40 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76232 ,  H01L21/764 ,  H01L28/10 ,  H01L29/0692 ,  H01L29/401 ,  H01L29/407 ,  H01L29/408 ,  H01L29/7811 ,  H01L29/7813

Abstract: An electronic device can include a substrate and an insulating structure. In an aspect, an anchor can include a portion of the substrate that extends into the insulating structure or a portion of the insulating structure that extends into the substrate. In another aspect, a process of forming an electronic device can include patterning a substrate to define a trench and a first anchor; and forming an insulating structure within the trench and adjacent to the first anchor. In a further aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and a first pillar spaced apart from the sidewall; doping the first pillar to change a conductivity type of the first pillar; and forming an insulating structure that surrounds the first pillar.